Abstract:An initial stage of InN growth on cubic zirconia (111) substrates has been investigated using first‐principles calculations based on density functional theory (DFT). We have evaluated adsorption energies of indium and nitrogen atoms on cubic zirconia (111) surfaces, and have found that the differences in the adsorption energies of the indium atoms at various adsorption sites were small, indicating that the migration of the indium atoms on zirconia (111) surfaces occurs readily. On the other hand, we have found that the differences in the adsorption energies of the nitrogen atoms at various adsorption sites were large, implying that the nitrogen atoms tend to stay at the stable site with the largest adsorption energy, which was identified as the O–Zr bridge site. These results suggest that the first layer of InN films is the nitrogen layer. In addition, we have found that the energetically favorable arrangement is comprised of InN(0001)//cubic zirconia (111) and InN $ [11\bar 20] $//cubic zirconia $ [1 \bar 10], $ which is quite consistent with previously obtained experimental data. Furthermore, the hybridization effect between N 2p and O 2p plays a crucial role in determining the interface structure for the growth of InN on cubic zirconia (111) surfaces. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Tetragonal Distortion of InN Thin Films by RBS/Channeling

Dislocation and elastic strain in an InN film characterized by synchrotron radiation X-ray diffraction and Rutherford backscattering/channeling

High-Precision Determination of Lattice Constants and Structural Characterization of Inn Thin Films

Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

Reflectance Difference Spectroscopy Microscope for Circular Defects on InN Films

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

Characterization of Tetragonal Distortion in A Thick Al0.2ga0.8n Epilayer with an Aln Interlayer by Rutherford Backscattering/Channeling

Raman Investigations of Disorder in Inn Thin Films Grown by Reactive Sputtering on Gaas

Depth Dependence of Structural Quality in InN Grown by Metalorganic Chemical Vapor Deposition

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

Determination of Tetragonal Distortion of Al0.69In0.09Ga0.22N/GaN Heterostructure by RBS/C and HRXRD

Polycrystalline InN thin films prepared by ion-beam-assisted filtered cathodic vacuum arc technique

Experimental Studies Of Lattice Dynamical Properties In Indium Nitride

Tuning of the tetragonal distortion in AlInGaN thin films by different contents of Al and In

Structural Investigations of Epitaxial Inn by X-Ray Photoelectron Diffraction and X-Ray Diffraction

Theoretical Study of the Initial Stage of Inn Growth on Cubic Zirconia (111) Substrates

Depth Dependent Tetragonal Distortion of a GaN Epilayer with an AlN Interlayer on Si(111) Studied by Rutherford Backscattering/channeling

Optical Properties of InN Films Grown by MOCVD

Microstructure and Dislocation of Epitaxial Inn Films Revealed by High Resolution X-Ray Diffraction

Investigations on Structural Properties of Carbon Nitride Films Synthesized by Reactive Ionized Cluster Beam Deposition

Growth-dependent Phonon Characteristics in InN Thin Films