Depth dependence of tetragonal distortion of a ZnO/Mg0.1Zn 0.9O/ZnO heterostructure studied by Rutherford backscattering/ channeling

Kun Wang,ZhiBo Ding,Lin Li,Shude Yao,王坤,丁志博,李琳,姚淑德
DOI: https://doi.org/10.1088/0256-307X/26/10/108101
2009-01-01
Chinese Physics Letters
Abstract:Rutherford backscattering and channeling are used to characterize the structure of a ZnO/Mg0.1Zn0.9O/ZnO heterostructure grown on a sapphire (0001) substrate by rf plasma-assisted molecular beam epitaxy. The results show that the Mg0.1Zn0.9O layer has the same hexagonal wurtzite structure as the underlying ZnO layer, and the heterostructure has a good crystalline quality with chi(min) = 5%, which is the ratio of the backscattering yields of aligned and random spectra in the near-surface region. Using the channeling angular scan around an off-normal. < 1 (2) over bar 13 >. axis in the {10 (1) over bar0} plane of both ZnO and MgZnO layer, the tetragonal distortion e(T), which is caused by the elastic strain in the epilayer, is determined. The depth dependence of e(T) is obtained by using this technique. It can clearly be seen that the elastic strain rapidly decreases with the increase in thickness of the ZnO film in the early growth stage and becomes slightly larger in the region of the Mg0.1Zn0.9O layer.
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