Abstract:The growth techniques for MgxZn1-xO thin films have advanced at a rapid pace in recent years, enabling the application of this material to a wide range of optical and electrical applications. In designing structures and optimizing device performances, it is crucial that the Mg content of the alloy be controllable and precisely determined. In this study, we have established laboratory-based methods to determine the Mg content of MgxZn1-xO thin films grown on ZnO substrates, ranging from the solubility limit of x ~ 0.4 to the dilute limit of x < 0.01. For the absolute determination of Mg content, Rutherford backscattering spectroscopy is used for the high Mg region above x = 0.14, while secondary ion mass spectroscopy is employed to quantify low Mg content. As a lab-based method to determine the Mg content, c-axis length is measured by X-ray diffraction and is well associated with Mg content. The interpolation enables the determination of Mg content to x = 0.023, where the peak from the ZnO substrate overlaps the MgxZn1-xO peak in standard laboratory equipment, and thus quantitative determination. At dilute Mg contents below x = 0.023, the localized exciton peak energy of the MgxZn1-xO films as measured by photoluminescence is found to show a linear Mg content dependence, which is well resolved from the free exciton peak of ZnO substrate down to x = 0.0043. Our results demonstrate that X-ray diffraction and photoluminescence in combination are appropriate methods to determine Mg content in a wide Mg range from x = 0.004 to 0.40 in a laboratory environment.

Elastic Strain in Mg0.28zn0.72o Layer: Combined Rutherford Backscattering/Channeling and X-Ray Diffraction

Depth Dependent Elastic Strain in ZnO Epilayer: Combined Rutherford Backscattering/channeling and X-ray Diffraction

Depth dependence of tetragonal distortion of a ZnO/Mg0.1Zn 0.9O/ZnO heterostructure studied by Rutherford backscattering/ channeling

Depth-dependent elastic strain In ZnO/Zn0.9Mg0.1O/ZnO heterostructure studied by Rutherford backscattering/channeling

Structural and Optical Studies of Mg(X)Zn(1-X)Ofilms Grown on Sapphire

Elastic and inelastic strain in submicron-thick ZnO epilayers grown on r-sapphire substrates by metal–organic vapour phase deposition

Elastic strain in InGaN and AlGaN layers

Strain in Algan Layer Studied by Rutherford Backscattering/Channeling and X-Ray Diffraction

Epitaxial growth and stress analysis of Zn1-xMgxO films on (111) Si substrates

Growth of Non-Polar Zn1−x Mg X O Thin Films with Different Mg Contents on R-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

The Study of Composition Non-Uniformity in Ternary Mgxzn1-Xo Thin Films

Strain-Free Al0.08in0.018ga0.902n/Gan Heterostructure: Combined Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Characterizations of Cubic ZnMgO Films Grown on Si(111) at Low Substrate Temperature

Precise calibration of Mg concentration in MgxZn1-xO thin films grown on ZnO substrates

Structural and Photoluminescence Properties of Zn0.8Mg0.2O Thin Films Grown on Si Substrate by Pulsed Laser Deposition

The Microstructure and Mechanical Properties of As-cast Mg-10Gd-3Y-xZn-0.6Zr (x=0, 0.5, 1 and 2 Wt%) Alloys

Biaxial Strain Engineering on the Superconducting Properties of MgB2 Monolayer

Cubic Mgxzn1-Xo Films Grown on Si(111)

Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes

Growth of high quality Zn0.9Mg0.1O films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Local structure evolution in polycrystalline Zn$_{1-x}$Mg$_x$O ($0\leq{x}\leq{0.15}$) studied by Raman and by synchrotron x-ray pair distribution analysis