Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes

Elastic and inelastic strain in submicron-thick ZnO epilayers grown on r-sapphire substrates by metal–organic vapour phase deposition

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

STRUCTURAL AND OPTICAL STUDIES OF ZnO FILMS GROWN AT LOW TEMPERATURE

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Depth Dependent Elastic Strain in ZnO Epilayer: Combined Rutherford Backscattering/channeling and X-ray Diffraction

Structural and Optical Properties of Nonpolar $(11 \bar{2}0)$ ZnO Films Grown by Plasma-Assisted Molecular-Beam Epitaxy

Comparisons of Structural and Optical Properties of ZnO Films Grown on Sapphire and Si(001)

Structural and Optical Studies of Mg(X)Zn(1-X)Ofilms Grown on Sapphire

Epitaxial growth of non-polar m-plane ZnO thin films by pulsed laser deposition

Comparison of Structural and Optical Properties of ZnO Films Grown on Different Substrates at Low Temperatures

Effects of Growth Temperature and Oxygen Pressure on the Properties of Heteroepitaxial Zno Thin Films on Sapphire (0001) Substrates by Pulsed Laser Deposition

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Optical Properties and Structural Characteristics of Zno Thin Films Grown on A-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

Growth of Epitaxial C-Plane Zno Film on A-Plane Sapphire by Radio Frequency Reactive Magnetron Sputtering

Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Growth of High-Quality ZnO Thin Films on ( 112̅0 ) A-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy