Abstract:Aluminum-doped ZnO (AZO) has huge prospects in the field of conductive electrodes, due to its low price, high transparency, and pro-environment. However, enhancing the conductivity of AZO and realizing ohmic contact between the semiconductor and AZO source/drain (S/D) electrodes without thermal annealing remains a challenge. Here, an approach called pulsed laser deposition (PLD) is reported to improve the comprehensive quality of AZO films due to the high energy of the laser and non-existence of the ion damage. The 80-nm-thick AZO S/D electrodes show remarkable optical properties (transparency: 90.43%, optical band gap: 3.42 eV), good electrical properties (resistivity: 16 × 10−4 Ω·cm, hall mobility: 3.47 cm2/V·s, carrier concentration: 9.77 × 1020 cm−3), and superior surface roughness (Rq = 1.15 nm with scanning area of 5 × 5 μm2). More significantly, their corresponding thin film transistor (TFT) with low contact resistance (RSD = 0.3 MΩ) exhibits excellent performance with a saturation mobility (µsat) of 8.59 cm2/V·s, an Ion/Ioff ratio of 4.13 × 106, a subthreshold swing (SS) of 0.435 V/decade, as well as good stability under PBS/NBS. Furthermore, the average transparency of the unpatterned multi-films composing this transparent TFT can reach 78.5%. The fabrication of this TFT can be suitably transferred to transparent arrays or flexible substrates, which is in line with the trend of display development.

Feasibility of ZnO:Al/Ag/ZnO:Al multilayer source/drain electrode to achieve fully transparent HfInZnO thin film transistor

48.2: Invited Paper: High Conductivity & Transparent Aluminum‐based Multi‐layer Source/drain Electrodes for Thin Film Transistors

Highly Transparent and Conductive W-Doped ZnO/Cu/W-Doped ZnO Multilayer Source/Drain Electrodes for Metal-Oxide Thin-Film Transistors

High Conductivity and Transparent Aluminum-Based Multi-Layer Source/drain Electrodes for Thin Film Transistors

Effect of Film Thickness on Properties of Al-Doped Zno Film As Transparent Conducting Electrodes in Oleds

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Highly Conductive and Transparent AZO Films Fabricated by PLD As Source/Drain Electrodes for TFTs

Fully transparent al-doped ZnO thin-film transistors on flexible plastic substrates

Transparent Thin-Film Transistors Using ZnMgO as Dielectrics and Channel

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT

Dip-coated Al–In–Zn–O Thin-Film Transistor with Poly-Methylmethacrylate Gate Dielectric

High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT with an Al-Doped ${\rm ZrO}_{2}$ Gate Dielectric

Solution Processed HfInZnO Thin Film Transistors with HfSiO_x Dielectrics Modified by Al_2O_3 Films

Al-Doped Zno Thin-Film Transistors on Flexible Plastic Substrate

Amorphous InGaZnO Thin Film Transistors with Different Transparent Electrodes

Transparent Electronics Using One Binary Oxide for All Transistor Layers

Island‐Like AZO/Al2O3 Bilayer Channel Structure for Thin Film Transistors

Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

Effect of Al Doping on Performance of ZnO Thin Film Transistors