Abstract:Integrating biodegradable cellulose nanopaper into oxide thin-film transistors (TFTs) for next generation flexible and green flat panel displays has attracted great interest because it offers a viable solution to address the rapid increase of electronic waste that poses a growing ecological problem. However, a compromise between device performance and thermal annealing remains an obstacle for achieving high-performance nanopaper TFTs. In this study, a high-performance bottom-gate IGZO/Al2O3 TFT with a dual-layer channel structure was initially fabricated on a highly transparent, clear, and ultrasmooth nanopaper substrate via conventional physical vapor deposition approaches, without further thermal annealing processing. Purified nanofibrillated cellulose with a width of approximately 3.7 nm was used to prepare nanopaper with excellent optical properties (92% transparency, 0.85% transmission haze) and superior surface roughness (Rq is 1.8 nm over a 5 × 5 μm2 scanning area). More significantly, a bilayer channel structure (IGZO/Al2O3) was adopted to fabricate high performance TFT on this nanopaper substrate without thermal annealing and the device exhibits a saturation mobility of 15.8 cm2/(Vs), an Ion/Ioff ratio of 4.4 × 105, a threshold voltage (Vth) of -0.42 V, and a subthreshold swing (SS) of 0.66 V/dec. The room-temperature fabrication of high-performance IGZO/Al2O3 TFTs on such nanopaper substrate without thermal annealing treatment brings industry a step closer to realizing inexpensive, flexible, lightweight, and green paper displays.

48.2: Invited Paper: High Conductivity & Transparent Aluminum‐based Multi‐layer Source/drain Electrodes for Thin Film Transistors

High Conductivity and Transparent Aluminum-Based Multi-Layer Source/drain Electrodes for Thin Film Transistors

Highly Conductive and Transparent AZO Films Fabricated by PLD As Source/Drain Electrodes for TFTs

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Highly Transparent and Conductive W-Doped ZnO/Cu/W-Doped ZnO Multilayer Source/Drain Electrodes for Metal-Oxide Thin-Film Transistors

Fully transparent al-doped ZnO thin-film transistors on flexible plastic substrates

All-Aluminum Thin Film Transistor Fabrication at Room Temperature

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

Sn-Doped Zno Thin-Film Transistors with Azo, Tzo and Al Heterojunction Source/Drain Contacts

Amorphous IZO-based transparent thin film transistors

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates

Amorphous InGaZnO Thin Film Transistors with Different Transparent Electrodes

High-performance transparent AZO TFTs fabricated on glass substrate

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate

Highly Transparent IGZO-TFTs Uses IGZO Source and Drain Electrodes with a Composite Insulation Layer Structure

High-performance fully transparent Ti-Zn-O thin film transistors

Low-voltage Transparent Electric-Double-layer ZnO-based Thin-Film Transistors for Portable Transparent Electronics

Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper.