Abstract:Abstract Flexible integrated circuits have gained a lot of attention in recent years for their emerging applications in wearable electronics. Flexible thin-film transistors (TFTs) with low-costs and high-performance are highly desirable as essential and fundamental elements for most flexible applications. In this paper, we fabricate single-crystalline silicon nanomembrane (SiNM)-based TFTs with anodized aluminum oxide (AAO) as a dielectric material on glass and flexible plastic substrates. Good quality AAO was obtained on plastic substrates at room temperature. Atomic force microscopy (AFM)was used for the surface morphology of the AAO gate dielectric layers on different substrates (i.e. glass, polyethylene terephthalate (PET), and SU-8 coated PET). The electrical characteristics of the AAO gate dielectric layers on different substrates were also analyzed with metal–insulator–metal capacitors. The SiNMs were processed with a complementary metal oxide semiconductor (CMOS) compatible semiconductor process (e.g. photolithography, ion implantation, thermal annealing, reactive ion etching, metal evaporation, etc), and then transferred to the substrates with AAO/aluminum stack layers. The performance of the transistors on glass and plastic substrates was characterized. Compared with the TFT fabricated on a glass substrate, the TFT fabricated directly on a PET substrate had lower performance due to poor surface roughness. For optimization of the surface roughness, the PET was modified with a coating of SU-8 photoresist. In this way, the TFT had properties close to that on a glass substrate. AAO that can be manufactured at room temperature provides a simple and low-cost solution for high-performance flexible single-crystalline SiNM TFTs.

All-Aluminum Thin Film Transistor Fabrication at Room Temperature

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper.

48.2: Invited Paper: High Conductivity & Transparent Aluminum‐based Multi‐layer Source/drain Electrodes for Thin Film Transistors

All-Sputtered, Flexible, Bottom-Gate Igzo/Al2o3 Bi-Layer Thin Film Transistors on Pen Fabricated by A Fully Room Temperature Process

Flexible Thin-Film Transistors on Plastic Substrate at Room Temperature.

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

High Conductivity and Transparent Aluminum-Based Multi-Layer Source/drain Electrodes for Thin Film Transistors

High reliability amorphous oxide semiconductor thin-film transistors gated by buried thick aluminum

Fully transparent al-doped ZnO thin-film transistors on flexible plastic substrates

All‐Oxide Transparent Thin‐Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing

Al-Doped Zno Thin-Film Transistors on Flexible Plastic Substrate

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

All-sputtered, flexible, bottom-gate IGZO/Al 2 O 3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process

Single-crystalline silicon nanomembrane thin-film transistors with anodized aluminum oxide as a gate dielectric on rigid and flexible substrates

High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature

37.1: <i>Invited Paper:</i> A Room‐Temperature Manufacturing Strategy: Nd:AIZO/Al<sub>2</sub>O<sub>3</sub> Thin‐Film Transistor

P‐1.11: High‐mobility ZnO thin‐film transistors with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer dielectric

Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer