Abstract:Flexible wearable electronics have been developing rapidly in recent years, and one of its core devices, thin‐film transistor (TFT), is also attracting attention. Current TFT preparation processes usually require high annealing temperatures (>350°C), which is not conducive to their application on most flexible substrates (PET, PEN and nanopaper, etc.). In this paper, we propose a strategy for the room temperature preparation of Nd:AIZO/Al2O3 dual‐layer TFT devices, which have appreciable electrical properties without additional annealing treatment. We have used Taguchi orthogonal experimental methods to investigate the effects of three essential process parameters on the performance of the films and devices. We analyze the test results of XRR, μ‐PCD, XPS of the films and correlate them with TFTs electrical performance. As Nd:AIZO deposition time decreases and Al2O3 oxygen percentage and time during deposition increase, the μsat and SS of TFT devices are improved. With the preferred combination of parameters applied to the device preparation, the device exhibits a saturation mobility μsat of 24.3 cm2V‐1s‐1, a threshold voltage Vth of ‐1.4 V, a subthreshold swing SS of 0.21 V/decade and an Ion/Ioff ratio of 4.26×108. The ultra‐thin Al2O3 layer act as defect modification and form high‐speed electron transport in channel layer. This dual‐layer structure reduced the localized defect states in the back‐channel region and the water‐oxygen adsorption. The room temperature preparation of the dual‐layer TFT process proposed in this paper is compatible with large‐size low‐cost flexible substrates. It has great potential for application in green flexible wearable electronics. This article is protected by copyright. All rights reserved.

Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer

Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper.

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Room-temperature fabrication of flexible oxide TFTs by co-sputtering of IGZO and ITO

High Reliability Of Igzo Tfts Using Low-Temperature Fabricated Organic Passivation Layers

All-Sputtered, Flexible, Bottom-Gate Igzo/Al2o3 Bi-Layer Thin Film Transistors on Pen Fabricated by A Fully Room Temperature Process

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature

Enhanced performances of a-IGZO TFTs with oxide passivation layers fabricated by hollow cathode assisted PLD

Enhancement Mechanism of Al<sub>2</sub>O<sub>3</sub> Passivation Layer on Electrical Properties of a-IGZO Thin Film Transistors

Growth of IZO/IGZO Dual-Active-layer for Low-Voltage-drive and High-Mobility Thin Film Transistors Based on an ALD Grown Al2O3 Gate Insulator

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

High-Performance Fully Thermal ALD-Processed IGZO Thin Film Transistors

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High‐performance Nd: AIZO/Al2O3 dual active layer design without thermal annealing: high‐speed electron transport and defect modification in thin film transistors

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C

Fabrication of Flexible Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors by a Chemical Vapor Deposition-Free Process on Polyethylene Napthalate

37.1: <i>Invited Paper:</i> A Room‐Temperature Manufacturing Strategy: Nd:AIZO/Al<sub>2</sub>O<sub>3</sub> Thin‐Film Transistor

A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 degrees C