Abstract:Active electronics implemented on cheap flexible polymer substrates offer the promise of novel display technologies, wearable electronics, large area memory, and a multitude of other, as-yet-unthought-of applications that require low cost and high volume manufacturing. Thin film transistors (TFT's) fabricated on temperature-sensitive plastic substrates at low temperatures are the key to this technology. TFT's that use metal (In, Zn, Sn, Ga) oxide channels offer both high mobility (relative to amorphous Si) and the advantage of optical transparency in the visible regime. We report on the fabrication and performance of amorphous oxide transparent thin film transistors that use dc-magnetron sputter techniques to deposit IZO (In2O3 — 10 wt.% ZnO) at low oxygen potential (0 vol.% O2) for the source, drain, and gate-contact metallization and, at higher oxygen partial pressures (10 vol.% O2), for the semi-conducting channel. The devices in this study were processed at room temperature except for a single 280 °C PECVD deposition step to deposit a 230 nm-thick SiOx gate dielectric. The devices are optically transparent and operate in depletion mode with a threshold voltage of −5 V, mobility of 15 cm2/V s, an on-off ratio of >106 and, a sub-threshold slope of 1.2 V/decade. In addition, we report persistent photo-conductivity in the channel region of these devices when exposed to UV illumination.

Amorphous InGaZnO Thin Film Transistors with Different Transparent Electrodes

Amorphous IZO-based transparent thin film transistors

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Amorphous InGaZnO Thin Film Transistors with Wet-Etched Ag Electrodes

Fabrication and performance of indium oxide based transparent thin film transistors

Achieving High Performance Thin Film Transistors Based on Gallium Doped Indium Zinc Tin Oxide

High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates

Fabrication of Bottom-Gate and Top-Gate Transparent ZnO Thin Film Transistors

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

High Performance Thin Film Transistors With Sputtered In–Al–Zn–O Channel and Different Source/Drain Electrodes

Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes

High-Performamce Amorphous Ingazno Thin-Film Transistor with Zrlao Gate Dielectric Fabricated at Room Temperature

Fabrication and Comparative Study of Top-Gate and Bottom-Gate ZnO–TFTs with Various Insulator Layers

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Enhanced Performance of A-Igzo Thin-Film Transistors by Forming AZO/IGZO Heterojunction Source/drain Contacts

Investigation on the Electrical Properties of Amorphous Indium-Zinc-Titanium-Aluminum Oxide Thin Film Transistors

Chitosan-Gated Low-Voltage Transparent Indium-Free Aluminum-Doped Zinc Oxide Thin-Film Transistors

Amorphous Indium-zinc-oxide Thin-film Transistors with Copper Source/Drain Electrodes