Abstract:Al2O3, as one of the gate dielectric materials for thin film transistors (TFTs), has been extensively investigated because of its large bandgap, high breakdown field, and good thermal stability. However, the further development of Al2O3 thin films is limited by the presence of defects such as oxygen vacancies, self-interstitial atoms, or impurity elements. To overcome this obstacle, we have developed a novel method for fabricating Al2O3 thin films by using the atomic layer deposition (ALD) technique. This method replaces the conventional Trimethylaluminium (TMA)/H2O cycles with TMA/TMA/H2O/H2O cycles (referred to as ‘double cycles’), to deposit the Al2O3. The 5-nm ultrathin Al2O3 film showed a high areal capacitance of 660 nF/cm2 at 20 Hz, and a relatively low current density of 10−8 A/cm2 at 1 MV/cm. InGaZnO (IGZO) TFTs with ultrathin Al2O3 gate dielectric grown by double cycles exhibited outstanding performances, such as a near theoretical limit subthreshold swing (SS) of 70 mV/decade, a higher on/off current ratio $(I_{\mathrm{ on}} / I_{\mathrm{ off}}$ ) of 106, an increased field-effect mobility ( $\mu $ ) of 6.5 cm2/Vs, a lower threshold voltage $(V_{\mathrm{ th}})$ of 0.2 V, and a low operating voltage of 3 V. These results are superior to the IGZO TFTs with Al2O3 dielectrics deposited using the single TMA/H2O cycle. Therefore, the implementation of ‘double cycles’ in the fabrication of dielectrics through ALD demonstrates considerable potential for future application in low-power electronic devices.

Enhanced Performance of A-Igzo Thin-Film Transistors by Forming AZO/IGZO Heterojunction Source/drain Contacts

High Performance Ti-Doped ZnO TFTs with AZO/TZO Heterojunction S/D Contacts

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Atomic Layer Deposition of Al-Doped ZnO Contacts for ZnO Thin-Film Transistors

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

Sn-Doped Zno Thin-Film Transistors with Azo, Tzo and Al Heterojunction Source/Drain Contacts

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Island‐Like AZO/Al2O3 Bilayer Channel Structure for Thin Film Transistors

Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes

Homo-Junction Bottom-Gate Amorphous In–Ga–Zn–O TFTs with Metal-Induced Source/Drain Regions

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Effect of HfO2-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors

Amorphous InGaZnO Thin Film Transistors with Wet-Etched Ag Electrodes

Evolution of Enhanced Performance of a-IGZO TFTs With Cu/Al-Based Contacts

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Effect of Al Doping on Performance of ZnO Thin Film Transistors

Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain