Abstract:High-performance In–Al–Zn–O (IAZO) films and thin film transistors (TFTs) were fabricated using RF magnetron sputtering. The influence of sputtering power (90–250 W) on the film properties and device performance was investigated. All the IAZO films were in the amorphous state both before and after annealing, with a decrease in surface roughness observed with the increase of sputtering power. The Hall mobility of the annealed IAZO films degraded as the sputtering power increased. The highest Hall mobility of 63.6 cm 2 / <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}\cdot \text{s}$ </tex-math></inline-formula> and a proper carrier concentration of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${3.22} \times {10}^{{14}}$ </tex-math></inline-formula> /cm 3 were obtained for the 90-W-deposited film. All the IAZO films exhibited high average visible transmittances (above 92%) and large optical bandgaps (4.10 ± 0.03 eV). The IAZO TFT prepared at 90 W had the best electrical properties with a high saturation mobility of 12.08 cm 2 / <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}\cdot \text{s}$ </tex-math></inline-formula> , a high ON–OFF current ratio of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${7.75} \times {10}^{{7}}$ </tex-math></inline-formula> , a low hysterisis of −0.19 V, and a low subthreshold swing (SS) of 0.55 V/dec.

High Performance Thin Film Transistors With Sputtered In–Al–Zn–O Channel and Different Source/Drain Electrodes

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Preparation and Electrical Characteristics of Transparent Thin Film Transistors with Sputtered Aluminum and Phosphorus Co-Doped Indium-Zinc-oxide Channel Layer

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

Highly Efficient UV-Ozone Treatment for IAZO Active Layer to Facilitate the Low Temperature Fabrication of High Performance Thin Film Transistors

High-performance Al-Zn-O Thin-Film Transistors Sputtering at Different Power

Amorphous InGaZnO Thin Film Transistors with Different Transparent Electrodes

Impact of Sputtering Power on Amorphous In–Al–Zn–O Films and Thin Film Transistors Prepared by RF Magnetron Sputtering

Investigation of High-Performance ITO-Stabilized ZnO TFTs with Hybrid-Phase Microstructural Channels

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Enhancement-mode Thin Film Transistor Using Amorphous Phosphorus-Doped Indium–Zinc–Tin-Oxide Channel Layer

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Achieving High Performance Thin Film Transistors Based on Gallium Doped Indium Zinc Tin Oxide

Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing

High-performance thin film transistors based on amorphous Al–N co-doped InZnO films prepared by RF magnetron sputtering

Annealing Treatment on Amorphous InAlZnO Films for Thin-Film Transistors

High-Performance Al–Sn–Zn–O Thin-Film Transistor with a Quasi-Double-Channel Structure

Amorphous zinc-doped indium oxide channel layers prepared by DC reactive magnetron sputtering

High-performance Fully Transparent Al–Sn–Zn–O Thin-Film Transistors Using Double-Channel Structures

High-Performance Staggered Top-Gate Thin-Film Transistors with Hybrid-Phase Microstructural Ito-Stabilized Zno Channels

Double Active Layer InZnO:N/InZnSnO Thin Film Transistors with High Mobility at Low Annealing Temperature