Abstract:Abstract Recently, flat panel display technologies are based on amorphous silicon (a-Si), polycrystalline silicon (poly-Si) or amorphous oxide semiconductor (AOS) thin film transistors (TFTs) technology. In order to reach higher performance for ultra-high resolution display applications, the material selection for the channel layer is vital. AOS TFTs drawn lots of attention because of its advantages such as low leakage current, high driving current and high uniformity [1,3]. In this work, we presented a novel amorphous oxide semiconductor (AOS) material of gallium-free a-InWZnO thin film transistors (IWZO TFTs) which is very promising to be applied for ultra-high resolution display technology. Experiment In this work, we demonstrated the structure of a-IWZO TFTs processes. Figure 1 shows the schematic of the TFT cross-section. After growing a 550 nm thermal oxide layer as buffer layer, a 25-nm-thick of molybdenum was deposited by DC-sputter as the bottom gate electrode. A 10-nm-HfO 2 was deposited by plasma-enhanced atomic layer deposition (PEALD) system as high-κ gate dielectric (GI). Then, post deposition annealing (PDA) was carried out to enhance the quality of the insulator layer. Next, an ultra-thin body a-IWZO was deposited by RF-sputter as channel layer. Finally, source and drain were defined by lift-off process and the gate contact via was etched by dry etching to finish the device fabrication. Result and Discussion Figure 1(b) shows the negative gate bias stress (NGBS) transfer curve (I D -V G ) of a-IWZO TFTs with passivation layer. The experimental results have shown that passivation layer could keep the back channel of IWZO channel from exposing to oxygen and hydrogen from the atmosphere. Without the passivation layer, the back channel would contact moisture leading the diffused hydrogen atoms to fill oxygen vacancy sites and de-trap free carriers, causing the V TH shifts negatively. The ultra-thin a-IWZO TFTs with passivation layer exhibited a low subthreshold swing (S.S.) of 89.7 mV/dec, high on/off current ratio (I ON /I OFF ) of 2.1×10 7 and small threshold voltage shift (ΔV th ) of -0.097 V during NGBS of -2MV/cm with 2000s. To sum up, the passivation layer could enhance the a-IWZO TFTs reliability. Reference [1] Kamiya, H. Hosono, NPG Asia Mater ., vol. 2, pp. 15, 2010. [2] Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, nature, vol. 432, no. 7016, pp. 488-492, 2004. [3] Y. Kuo, C. M. Chang, I. H. Liu, and P. T. Liu, Scientific reports, vol. 9, no. 1, pp. 1-7, 2019. Figure 1

Highly Transparent and Conductive W-Doped ZnO/Cu/W-Doped ZnO Multilayer Source/Drain Electrodes for Metal-Oxide Thin-Film Transistors

48.2: Invited Paper: High Conductivity & Transparent Aluminum‐based Multi‐layer Source/drain Electrodes for Thin Film Transistors

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Highly Conductive and Transparent AZO Films Fabricated by PLD As Source/Drain Electrodes for TFTs

High Conductivity and Transparent Aluminum-Based Multi-Layer Source/drain Electrodes for Thin Film Transistors

Transparent Thin-Film Transistors Using ZnMgO as Dielectrics and Channel

Amorphous Indium-zinc-oxide Thin-film Transistors with Copper Source/Drain Electrodes

Highly Transparent IGZO-TFTs Uses IGZO Source and Drain Electrodes with a Composite Insulation Layer Structure

Fully transparent al-doped ZnO thin-film transistors on flexible plastic substrates

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Influence of Source and Drain Contacts on the Properties of Indium-Gallium Zinc-Oxide Thin-Film Transistors Based on Amorphous Carbon Nanofilm As Barrier Layer

High-performance fully transparent Ti-Zn-O thin film transistors

Performance Enhancement of Fully Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated by Sputtering at Low Temperature

Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Performances Of Thin Film Transistors With Ga-Doped Zno Source And Drain Electrodes

Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition.

Solution-Processed Zinc Oxilde Thin Films and Top-Gate Thin Film Transistors

High performance reactive sputtering deposited ZnO thin-film transistors on transparent substrate

High Reliability Tungsten-Doped Indium Zinc Oxide Thin Film Transistors for Display Applications

High Performance Ti-Doped ZnO TFTs with AZO/TZO Heterojunction S/D Contacts