Abstract:Silicon nitride (Si3N4) has excellent thermostability, low density, corrosion resistance, high mechanical strength. Therefore, it is widely used in the aerospace and military field. Femtosecond laser ablation is a potential method to fabricate micro features on silicon nitride surfaces, however thermal accumulation effect is a non-negligible challenge. In this paper, a comprehensive investigation of laser ablation of silicon nitride under different auxiliary processing environments were conducted in ambient air, water-confined environment and low temperature, accompanied with analysis of ablation depth, surface roughness, SEM topography and EDS detection. The experimental results showed that the laser ablation performed in ambient air would form obvious ablation depth, the depth would increase with number of ablation layers increased, but its surface roughness would be lager due to the thermal accumulation effect. The laser machining in low temperature could suppress the plasma shielding effect, enlarge ablation depth and reduce the degree of thermal damage. Besides that, it could also reduce the oxidation and surface roughness. The water-confined laser ablation could restrain the oxidation effectively, but it caused bubbles attaching on the machined surface, distortion of machined region, decreasing of material removal rate and other negative phenomena either. Moreover, the surface roughness increased and laser ablation depth decreased with the scanning speed increasing. Hence, femtosecond laser ablation under low temperature could improve the surface quality and reduce the thermal accumulation effect significantly.

The Impact of N-2 Anneal on Laser Processed Silicon

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Molecular Dynamic Simulation of Non-Melt Laser Annealing Process

Effect of annealing on photoluminescence of passivated porous silicon

Analysis of Energy Density and Scanning Speed Impacts on Ni/Sic Ohmic Contacts During Laser Annealing

Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

Laser Annealed SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Annealing and amorphous silicon passivation of porous silicon with blue light emission

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

High-temperature nitrogen annealing induced bonding states and photoluminescence changes in inductively coupled plasma torch synthesized silicon nanostructures

Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys

Investigation of mechanism and surface morphology on the femtosecond laser ablation of silicon nitride under different auxiliary processing environments

Nanosecond Laser Annealing: impact on superconducting Silicon on Insulator epilayers

Selective Contact Anneal Effects on Indium Oxide Nanowire Transistors Using Femtosecond Laser

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiN x for Low Temperature Thin Film Encapsulation