Growth feature of ionic nitrogen doped CN x bilayer films with Ti and TiN interlayer by pulse cathode arc discharge

bing zhou,zhubo liu,d g piliptsou,a v rogachev,shengwang yu,yanxia wu,bin tang,a s rudenkov
DOI: https://doi.org/10.1016/j.apsusc.2015.11.106
IF: 6.7
2016-01-01
Applied Surface Science
Abstract:•Ti/ and TiN/CNx (N+) bilayers are prepared at various frequencies by pulse cathode arc.•Ti interlayer facilitates the introduction of N atoms into the CNx (N+) films.•The most N-sp2C bonds (mainly graphite-like N) present in the TiN/CNx (N+, 3Hz) film.•Ti/CNx (N+, 3Hz) bilayer possesses small size and disordering of Csp2 clusters.•The higher hardness and the lower stress presents in the TiN/CNx (N+, 10Hz) bilayer.
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