Reactive Magnetron Sputter Deposited Cnx: Effects of N-2 Pressure and Growth Temperature on Film Composition, Bonding, and Microstructure
WT Zheng,H Sjostrom,I Ivanov,KZ Xing,E Broitman,WR Salaneck,JE Greene,JE Sundgren
DOI: https://doi.org/10.1116/1.580190
1996-01-01
Abstract:The effects of growth processes on the chemical bond structure, microstructure, and mechanical properties of carbon–nitride (CNx) thin films, deposited by reactive magnetron sputtering in a pure N2 discharge, are reported. The film deposition rate RD increases with increasing N2 pressure PN2 while N/C ratios remain constant. The maximum N concentration was ∼35 at. %. RD was found to be dependent upon the film growth temperature Ts. For a given PN2, RD decreased slightly as Ts was increased from 100 to 600 °C. The variations in RD with both PN2 and Ts can be explained by ion-induced desorption of cyano radicals CNx from both the target and growth surfaces during deposition. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy (FTIR) analyses showed that N atoms in films grown at Ts≳350 °C with low nitrogen partial pressures PN2, ∼2.5 mTorr, were bound to C atoms through hybridized sp2 and sp3 configurations. For low Ts=100 °C and higher PN2, 10 mTorr, triple-bonded C≡N was detected by FTIR. Two types of microstructures were observed by high-resolution transmission electron microscopy, depending on Ts: an amorphous phase, containing crystalline clusters for films deposited at Ts=100 °C, while a turbostraticlike or fullerenelike phase was observed for films deposited at Ts≳200 °C CNx films deposited a higher Ts and lower PN2 were found to have higher hardness and elastic modulus.