Preparation and structure analysis of amorphous carbon nitride films

GuiFeng Zhang,Jianhong Zhang,DongSheng Geng,Zhengtang Liu,Xiulin Zheng
1997-01-01
Abstract:Amorphous carbon nitride films (a-C:N) have been grown on Ge substrate by using the radio frequency sputtering of graphite in nitrogen and acetylene plasma. The structure and composition of a-C:N films were analyzed by the X-ray photoelectron spectroscopy (XPS), infrared absorption (FT-IR) and Raman spectroscopy (RS). The results indicate that the incorporated nitrogen is chemically bonded to carbon. The concentration of incorporated nitrogen and triple bonded CN in a-C:N films increases with the increase of nitrogen content in mixture gas.
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