Laser-induced Phase Transition in Crystal InSb Films As Used in Optical Storage

Y SUN,CF LI,H DENG,FX GAN
DOI: https://doi.org/10.1117/12.47269
1991-01-01
Abstract:We have analyzed the transient phase transition process in c-InSb films by the measurement of temporal reflectivity change. The results show that InSb film is a promising medium for optical storage, and the reflectivity change measurement is a useful method to explore the dynamic processes in thin films and the material's surfaces under pulsed laser irradiation.
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