Abstract:The reversible laser‐induced phase transition of Sb2S3 is investigated, focusing specifically on the mechanisms that drive the optical amorphization, with multi‐physics considerations including optical and thermal properties of the PCM and its environment. Comparison to experimental results enables a better understanding of the physics behind the optical change of phases in Sb2S3 layers, its limitations and how to overcome them. Phase change materials (PCMs) have gained a tremendous interest as a means to actively tune nanophotonic devices through the large optical modulation produced by their amorphous to crystalline reversible transition. Recently, materials such as Sb2S3 emerged as particularly promising low loss PCMs, with both large refractive index modulations and transparency in the visible and near‐infrared. Controlling the local and reversible phase transition in this material is of major importance for future applications, and an appealing method to do so is to exploit pulsed lasers. Yet, the physics and limits involved in the optical switching of Sb2S3 are not yet well understood. Here, the reversible laser‐induced phase transition of Sb2S3 is investigated, focusing specifically on the mechanisms that drive the optically induced amorphization, with multi‐physics considerations including the optical and thermal properties of the PCM and its environment. The laser energy threshold for reversibly changing the phase of the PCM is determined through both theoretical analysis and experimental investigation, not only between fully amorphous and crystalline states but also between partially recrystallized states. Then, the non‐negligible impact of the material's polycrystallinity and anisotropy on the power thresholds for optical switching is revealed. Finally, the challenges related to laser amorphization of thick Sb2S3 layers are addressed, as well as strategies to overcome them. These results enable a qualitative and quantitative understanding of the physics behind the optically‐induced reversible change of phase in Sb2S3 layers.

Reversible single-pulse laser-induced phase change of Sb$_2$S$_3$ thin films: multi-physics modeling and experimental demonstrations

Reversible Single‐Pulse Laser‐Induced Phase Change of Sb2S3 Thin Films: Multi‐Physics Modeling and Experimental Demonstrations

Multi-level Optical Switching by Amorphization in Single- and Multi- Phase Change Material Structures

Magnetron-sputtered and Thermal-Evaporated Low-Loss Sb-Se Phase-Change Films in Non-Volatile Integrated Photonics

Optimizing Wavelength for Enhanced Cycling Durability of Laser‐Induced Phase Change in Sb2S3 Films: A Survey on Optical Transmission Phase Shift

Intermediate Phase‐Change States with Improved Cycling Durability of Sb2S3 by Femtosecond Multi‐Pulse Laser Irradiation

Reversible optical switching of highly confined phonon–polaritons with an ultrathin phase-change material

Non‐Volatile Reconfigurable Integrated Photonics Enabled by Broadband Low‐Loss Phase Change Material

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

Phase-change Behaviors of Sb80Te20/SbSe Nanocomposite Multilayer Films

Sb_2S_3 as a low-loss phase-change material for mid-IR photonics

Time-resolved reversible optical switching of the ultralow-loss phase change material Sb2Se3

A simple method for programming and analyzing multilevel crystallization states in phase-change materials thin film

A scheme for simulating multi-level phase change photonics materials

Spatial and temporal control of glassy‐crystalline domains in optical phase change materials

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Tunable colorimetric thin-film structures based on phase change materials

Reconfigurable inverse designed phase-change photonics

Imaging of phase change materials below a capping layer using correlative infrared near-field microscopy and electron microscopy

Low Energy Switching of Phase Change Materials Using a 2D Thermal Boundary Layer

Phase-change Silicon As an Ultrafast Active Photonic Platform.