Abstract:Progress in integrated nanophotonics has enabled large-scale programmable photonic integrated circuits (PICs) for general-purpose electronic-photonic systems on a chip. Relying on the weak, volatile thermo-optic or electro-optic effects, such systems usually exhibit limited reconfigurability along with high energy consumption and large footprints. These challenges can be addressed by resorting to chalcogenide phase-change materials (PCMs) such as Ge2Sb2Te5 (GST) that provide substantial optical contrast in a self-holding fashion upon phase transitions. However, current PCM-based integrated photonic applications are limited to single devices or simple PICs due to the poor scalability of the optical or electrical self-heating actuation approaches. Thermal-conduction heating via external electrical heaters, instead, allows large-scale integration and large-area switching, but fast and energy-efficient electrical control is yet to show. Here, we model electrical switching of GST-clad integrated nanophotonic structures with graphene heaters based on the programmable GST-on-silicon platform. Thanks to the ultra-low heat capacity and high in-plane thermal conductivity of graphene, the proposed structures exhibit a high switching speed of ~80 MHz and high energy efficiency of 19.2 aJ/nm^3 (6.6 aJ/nm^3) for crystallization (amorphization) while achieving complete phase transitions to ensure strong attenuation (~6.46 dB/micron) and optical phase (~0.28 dB/micron at 1550 nm) modulation. Compared with indium tin oxide and silicon p-i-n heaters, the structures with graphene heaters display two orders of magnitude higher figure of merits for heating and overall performance. Our work facilitates the analysis and understanding of the thermal-conduction heating-enabled phase transitions on PICs and supports the development of the future large-scale PCM-based electronic-photonic systems.

Low Energy Switching of Phase Change Materials Using a 2D Thermal Boundary Layer

Robust electrothermal switching of optical phase change materials through computer-aided adaptive pulse optimization

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

Multi-level Optical Switching by Amorphization in Single- and Multi- Phase Change Material Structures

Performance Limits of Phase Change Integrated Photonics

Magnetron-sputtered and Thermal-Evaporated Low-Loss Sb-Se Phase-Change Films in Non-Volatile Integrated Photonics

Toward accurate thermal modeling of phase change material based photonic devices

A scheme for simulating multi-level phase change photonics materials

Optically Triggered Synchronous Heat Release of Phase‐Change Enthalpy and Photo‐Thermal Energy in Phase‐Change Materials at Low Temperatures

Advances in Photonic Devices Based on Optical Phase-Change Materials

Photoswitchable phase change materials for unconventional thermal energy storage and upgrade

Non‐Volatile Reconfigurable Integrated Photonics Enabled by Broadband Low‐Loss Phase Change Material

Combining Switchable Phase‐Change Materials and Phase‐Transition Materials for Thermally Regulated Smart Mid‐Infrared Modulators

Nonvolatile plasmonics based on optically reprogrammable phase change materials

Design of an ultra-compact, energy-efficient non-volatile photonic switch based on phase change materials

Modeling Electrical Switching of Nonvolatile Phase-Change Integrated Nanophotonic Structures with Graphene Heaters

Study on Thermophysical Properties and Phase Change Regulation Mechanism of Optically-Controlled Phase Change Materials: Synthesis, Crystal Structure and Molecular Dynamics

All-Optical Phase-Change Memory with Improved Performance by Plasmonic Effect

Development of a phase change material (PCM)-based thermal switch

The State-of-the-Art Phase-Change Integrated Photonic Devices With Electrically Driven Microheaters

Ultracompact High‐Extinction‐Ratio Nonvolatile On‐Chip Switches Based on Structured Phase Change Materials