Abstract:The emergence of integrated photonic technology provides an attractive solution of high speed, broad bandwidth and strong parallelism for large-scale information transmission and processing in interconnection, communication and computing. Reconfigurability is necessary for photonic processors to adapt varieties of application scenarios in the fields of data exchange, microwave photonics and neural networks. As yet, thermo-optical effect and carrier plasma dispersion effect are the most common phenomena for optical modulation. However, the volatility not only requires continuous power supply to maintain the devices’ state, but also accompanies with serious thermal crosstalk induced by active regions. Hence, the nonvolatile methods that can reconfigure and fix on the current state for a long time after a single external excitation are considered as one of the significant technologies in the next generation of integrated photonics. Nonvolatile reconfiguration has been achieved through trapped-charge effect, bistable micro-electromechanical system (MEMS) with nano-latch mechanism and ferroelectric materials, which suffer from high loss, lower stability and complex process flow. Chalcogenide phase change materials (PCM) have become a promising method to realize compact and nonvolatile reconfigurable integrated photonic devices due to the high optical constant contrast between amorphous state and crystalline state, superiorly stable property and low temperature deposition possibility. Here, we developed a monolithic back-end-of-line integration technology of PCM in silicon photonics, supporting "Zero-change" heterogeneous integration platform at wafer scale. On this basis, nonvolatile integrated photonic devices with excellent performance have been fabricated. It lays a foundation for improving the energy efficiency and integration density of integrated photonic processors and suppressing thermal crosstalk between integrated photonic devices.

Ultracompact High‐Extinction‐Ratio Nonvolatile On‐Chip Switches Based on Structured Phase Change Materials

All-optically Modulated Nonvolatile Optical Switching Based on a Graded-Index Multimode Fiber.

Ultra-compact Optical Switch Based on Sb2Se3-assisted PhC-like Subwavelength Structures

Design of an ultra-compact, energy-efficient non-volatile photonic switch based on phase change materials

Inverse Design and Numerical Investigations of an Ultra-Compact Integrated Optical Switch Based on Phase Change Material

Nonvolatile Silicon Photonic 1×2 Switch by Integrating the Phase Change Chalcogenide into Microring Network

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

Compact Nonvolatile 2×2 Photonic Switch Based on Two-Mode Interference

Non-volatile Polarization-Insensitive 1×2 Silicon Optical Switch Using Phase-Change Materials

Broadband nonvolatile photonic switching based on optical phase change materials: beyond the classical figure-of-merit.

Non‐Volatile Reconfigurable Integrated Photonics Enabled by Broadband Low‐Loss Phase Change Material

Magnetron-sputtered and Thermal-Evaporated Low-Loss Sb-Se Phase-Change Films in Non-Volatile Integrated Photonics

Multi-level Optical Switching by Amorphization in Single- and Multi- Phase Change Material Structures

Photonic Crystal Topological Interface State Modulation for Nonvolatile Optical Switching

Nonvolatile multi-level adjustable optical switch based on the phase change material

Phase Change Material Enabled 2 × 2 Silicon Nonvolatile Optical Switch.

Ultracompact and low-power-consumption silicon thermo-optic switch for high-speed data

Electronically Reconfigurable Photonic Switches Incorporating Plasmonic Structures and Phase Change Materials

Extreme Broadband Transparent Optical Phase Change Materials for High-Performance Nonvolatile Photonics

Broadband nonvolatile electrically programmable silicon photonic switches

Nonvolatile Reconfigurable Phase-change-materials Integrated Silicon Photonics