Abstract:The emergence of integrated photonic technology provides an attractive solution of high speed, broad bandwidth and strong parallelism for large-scale information transmission and processing in interconnection, communication and computing. Reconfigurability is necessary for photonic processors to adapt varieties of application scenarios in the fields of data exchange, microwave photonics and neural networks. As yet, thermo-optical effect and carrier plasma dispersion effect are the most common phenomena for optical modulation. However, the volatility not only requires continuous power supply to maintain the devices’ state, but also accompanies with serious thermal crosstalk induced by active regions. Hence, the nonvolatile methods that can reconfigure and fix on the current state for a long time after a single external excitation are considered as one of the significant technologies in the next generation of integrated photonics. Nonvolatile reconfiguration has been achieved through trapped-charge effect, bistable micro-electromechanical system (MEMS) with nano-latch mechanism and ferroelectric materials, which suffer from high loss, lower stability and complex process flow. Chalcogenide phase change materials (PCM) have become a promising method to realize compact and nonvolatile reconfigurable integrated photonic devices due to the high optical constant contrast between amorphous state and crystalline state, superiorly stable property and low temperature deposition possibility. Here, we developed a monolithic back-end-of-line integration technology of PCM in silicon photonics, supporting "Zero-change" heterogeneous integration platform at wafer scale. On this basis, nonvolatile integrated photonic devices with excellent performance have been fabricated. It lays a foundation for improving the energy efficiency and integration density of integrated photonic processors and suppressing thermal crosstalk between integrated photonic devices.

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

Nonvolatile Reconfigurable Phase-change-materials Integrated Silicon Photonics

"Zero change" platform for monolithic back-end-of-line integration of phase change materials in silicon photonics

Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics

Reconfigurable inverse designed phase-change photonics

Magnetron-sputtered and Thermal-Evaporated Low-Loss Sb-Se Phase-Change Films in Non-Volatile Integrated Photonics

Inverse design of compact nonvolatile reconfigurable silicon photonic devices with phase-change materials

Non‐Volatile Reconfigurable Integrated Photonics Enabled by Broadband Low‐Loss Phase Change Material

Performance Limits of Phase Change Integrated Photonics

Chalcogenides Phase Change Materials for PICs

Ultrahigh Endurance and Extinction Ratio in Programmable Silicon Photonics Based on a Phase Change Material with ITO Heater

Non-volatile tunable optics by design: From chalcogenide phase-change materials to device structures

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In2O3/GST Segmented Structures

Ultracompact programmable silicon photonics using layers of low-loss phase-change material Sb$_2$Se$_3$ of increasing thickness

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In<sub>2</sub>O<sub>3</sub>/GST Segmented Structures

Electronically Reconfigurable Photonic Switches Incorporating Plasmonic Structures and Phase Change Materials

Non-volatile electrically programmable integrated photonics with a 5-bit operation

Advances in Photonic Devices Based on Optical Phase-Change Materials

Extreme Broadband Transparent Optical Phase Change Materials for High-Performance Nonvolatile Photonics

A scheme for simulating multi-level phase change photonics materials

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.