Abstract:The emergence of integrated photonic technology provides an attractive solution of high speed, broad bandwidth and strong parallelism for large-scale information transmission and processing in interconnection, communication and computing. Reconfigurability is necessary for photonic processors to adapt varieties of application scenarios in the fields of data exchange, microwave photonics and neural networks. As yet, thermo-optical effect and carrier plasma dispersion effect are the most common phenomena for optical modulation. However, the volatility not only requires continuous power supply to maintain the devices’ state, but also accompanies with serious thermal crosstalk induced by active regions. Hence, the nonvolatile methods that can reconfigure and fix on the current state for a long time after a single external excitation are considered as one of the significant technologies in the next generation of integrated photonics. Nonvolatile reconfiguration has been achieved through trapped-charge effect, bistable micro-electromechanical system (MEMS) with nano-latch mechanism and ferroelectric materials, which suffer from high loss, lower stability and complex process flow. Chalcogenide phase change materials (PCM) have become a promising method to realize compact and nonvolatile reconfigurable integrated photonic devices due to the high optical constant contrast between amorphous state and crystalline state, superiorly stable property and low temperature deposition possibility. Here, we developed a monolithic back-end-of-line integration technology of PCM in silicon photonics, supporting "Zero-change" heterogeneous integration platform at wafer scale. On this basis, nonvolatile integrated photonic devices with excellent performance have been fabricated. It lays a foundation for improving the energy efficiency and integration density of integrated photonic processors and suppressing thermal crosstalk between integrated photonic devices.

Non-volatile tunable optics by design: From chalcogenide phase-change materials to device structures

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

Tunable Metasurfaces Based on Phase-Change Materials

Chiral Photonic Crystalline Microcapsules with Strict Monodispersity, Ultrahigh Thermal Stability, and Reversible Response.

Performance Limits of Phase Change Integrated Photonics

Tunable nanophotonics enabled by chalcogenide phase-change materials

Phase Change Materials in Photonic Devices

Advances in Photonic Devices Based on Optical Phase-Change Materials

Recent developments in Chalcogenide phase change material-based nanophotonics

Nonvolatile Reconfigurable Phase-change-materials Integrated Silicon Photonics

Progress in metasurfaces based on Ge–Sb–Te phase-change materials

Spatial and temporal control of glassy‐crystalline domains in optical phase change materials

Non‐Volatile Reconfigurable Integrated Photonics Enabled by Broadband Low‐Loss Phase Change Material

Magnetron-sputtered and Thermal-Evaporated Low-Loss Sb-Se Phase-Change Films in Non-Volatile Integrated Photonics

Fundamentals and Applications of Chalcogenide Phase-Change Material Photonics

Robust electrothermal switching of optical phase change materials through computer-aided adaptive pulse optimization

Tunable wavefront control in the visible spectrum using low-loss chalcogenide phase change metasurfaces

An evaluation criterion and a design strategy for high-performance optical phase change materials in absorption-modulated integrated photonics

Reconfigurable inverse designed phase-change photonics

Designing a Switchable High-Optical-contrast Material Platform for Visible Reconfigurable Nanophotonics

Tunable structural transmissive color in fano-resonant optical coatings employing phase-change materials