Inverse design of compact nonvolatile reconfigurable silicon photonic devices with phase-change materials

Maoliang Wei,Xiaobin Lin,Kai Xu,Yingchun Wu,Chi Wang,Zijia Wang,Kunhao Lei,Kangjian Bao,Junying Li,Lan Li,Erping Li,Hongtao Lin

DOI: https://doi.org/10.1515/nanoph-2023-0637

IF: 7.5

2024-01-13

Nanophotonics

Abstract:In the development of silicon photonics, the continued downsizing of photonic integrated circuits will further increase the integration density, which augments the functionality of photonic chips. Compared with the traditional design method, inverse design presents a novel approach for achieving compact photonic devices. However, achieving compact, reconfigurable photonic devices with the inverse design that employs the traditional modulation method exemplified by the thermo-optic effect poses a significant challenge due to the weak modulation capability. Low-loss phase change materials (PCMs) exemplified by Sb 2 Se 3 are a promising candidate for solving this problem benefiting from their high refractive index contrast. In this work, we first developed a robust inverse design method to realize reconfigurable silicon and phase-change materials hybrid photonic devices including mode converter and optical switch. The mode converter exhibits a broadband operation of >100 nm. The optical switch shows an extinction ratio of >25 dB and a multilevel switching of 41 (>5 bits) by simply changing the crystallinity of Sb 2 Se 3 . Here, we experimentally demonstrated a Sb 2 Se 3 /Si hybrid integrated optical switch for the first time, wherein routing can be switched by the phase transition of the whole Sb 2 Se 3 . Our work provides an effective solution for the design of photonic devices that is insensitive to fabrication errors, thereby paving the way for high integration density in future photonic chips.

optics,physics, applied,materials science, multidisciplinary,nanoscience & nanotechnology

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the challenges in designing compact and reconfigurable photonic devices in the field of silicon photonics. Specifically, traditional design methods have encountered significant difficulties in realizing compact and reconfigurable photonic devices. Especially when these devices use traditional modulation methods such as the thermo - optic effect, it is difficult to achieve the expected results due to the weak modulation ability. Low - loss phase - change materials (such as Sb₂Se₃) have become promising candidates for solving this problem because of their high refractive index contrast. In this paper, the research team has developed a robust inverse - design method for realizing hybrid photonic devices based on silicon and phase - change materials, including mode converters and optical switches. These devices are not only compact, but also can reconfigure their functions by changing the crystallization state of the phase - change materials without changing the structure, thereby increasing the functional diversity and integration density of the devices. In addition, this research also experimentally demonstrated for the first time an Sb₂Se₃/Si hybrid integrated optical switch that switches routes through the phase change of the entire Sb₂Se₃ structure, proving the insensitivity of this design to manufacturing errors and paving the way for future photonic chips with high integration density.

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