Abstract:The emergence of integrated photonic technology provides an attractive solution of high speed, broad bandwidth and strong parallelism for large-scale information transmission and processing in interconnection, communication and computing. Reconfigurability is necessary for photonic processors to adapt varieties of application scenarios in the fields of data exchange, microwave photonics and neural networks. As yet, thermo-optical effect and carrier plasma dispersion effect are the most common phenomena for optical modulation. However, the volatility not only requires continuous power supply to maintain the devices’ state, but also accompanies with serious thermal crosstalk induced by active regions. Hence, the nonvolatile methods that can reconfigure and fix on the current state for a long time after a single external excitation are considered as one of the significant technologies in the next generation of integrated photonics. Nonvolatile reconfiguration has been achieved through trapped-charge effect, bistable micro-electromechanical system (MEMS) with nano-latch mechanism and ferroelectric materials, which suffer from high loss, lower stability and complex process flow. Chalcogenide phase change materials (PCM) have become a promising method to realize compact and nonvolatile reconfigurable integrated photonic devices due to the high optical constant contrast between amorphous state and crystalline state, superiorly stable property and low temperature deposition possibility. Here, we developed a monolithic back-end-of-line integration technology of PCM in silicon photonics, supporting "Zero-change" heterogeneous integration platform at wafer scale. On this basis, nonvolatile integrated photonic devices with excellent performance have been fabricated. It lays a foundation for improving the energy efficiency and integration density of integrated photonic processors and suppressing thermal crosstalk between integrated photonic devices.

On-chip Reconfigurable Inverse-Designed Nanophotonic Devices Based on Phase-Change Materials

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

Reconfigurable inverse designed phase-change photonics

Inverse design of compact nonvolatile reconfigurable silicon photonic devices with phase-change materials

Port reconfigurable phase-change resonator

Optically reconfigurable metasurfaces and photonic devices based on phase change materials

Nonvolatile Reconfigurable Phase-change-materials Integrated Silicon Photonics

A Reconfigurable Photonic Computing Chip with Easily Scalable Topology

On-Chip Generation and Manipulation of Entangled Photons Based on Reconfigurable Lithium-Niobate Waveguide Circuits

An ultrafast reconfigurable nanophotonic switch using wavefront shaping of light in a nonlinear nanomaterial

Reconfigurable Silicon Photonics: Devices and Circuits

"Zero change" platform for monolithic back-end-of-line integration of phase change materials in silicon photonics

Lithography-free reconfigurable integrated photonic processor

Nonlocal phase-change metaoptics for reconfigurable nonvolatile image processing

Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics

Electronically Reconfigurable Photonic Switches Incorporating Plasmonic Structures and Phase Change Materials

Advances in Photonic Devices Based on Optical Phase-Change Materials

Deep Neural Network Inverse Design of Integrated Nanophotonic Devices

Port Reconfigurable Phase-Change Optical Resonator

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In2O3/GST Segmented Structures

Nonvolatile Multilevel Switching of Silicon Photonic Devices with In<sub>2</sub>O<sub>3</sub>/GST Segmented Structures