Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics

Maoliang Wei,Kai Xu,Bo Tang,Junying Li,Yiting Yun,Peng Zhang,Yingchun Wu,Kangjian Bao,Kunhao Lei,Zequn Chen,Hui Ma,Chunlei Sun,Ruonan Liu,Ming Li,Lan Li,Hongtao Lin

DOI: https://doi.org/10.1038/s41467-024-47206-7

IF: 16.6

2024-03-30

Nature Communications

Abstract:Abstract Monolithic integration of novel materials without modifying the existing photonic component library is crucial to advancing heterogeneous silicon photonic integrated circuits. Here we show the introduction of a silicon nitride etch stop layer at select areas, coupled with low-loss oxide trench, enabling incorporation of functional materials without compromising foundry-verified device reliability. As an illustration, two distinct chalcogenide phase change materials (PCMs) with remarkable nonvolatile modulation capabilities, namely Sb 2 Se 3 and Ge 2 Sb 2 Se 4 Te 1 , were monolithic back-end-of-line integrated, offering compact phase and intensity tuning units with zero-static power consumption. By employing these building blocks, the phase error of a push-pull Mach–Zehnder interferometer optical switch could be reduced with a 48% peak power consumption reduction. Mirco-ring filters with >5-bit wavelength selective intensity modulation and waveguide-based >7-bit intensity-modulation broadband attenuators could also be achieved. This foundry-compatible platform could open up the possibility of integrating other excellent optoelectronic materials into future silicon photonic process design kits.

multidisciplinary sciences

What problem does this paper attempt to address?

The problem this paper attempts to address is: how to monolithically integrate new materials into silicon photonic integrated circuits to achieve high-performance, low-power reconfigurable photonic devices without modifying existing photonic component libraries. Specifically, the paper demonstrates that by introducing a silicon nitride etch stop layer and low-loss oxide trenches, functional materials can be monolithically backend integrated into silicon photonic chips without affecting the reliability of foundry-verified devices.

### Main Issues
1. **Demand for High-Performance, Low-Power Photonic Devices**:
- Current modulation schemes (such as thermo-optic modulation and free carrier dispersion) have issues with weak modulation strength and the need for continuous power supply, resulting in large device sizes and high static power consumption, which limits the development of large-scale optoelectronic integration.

2. **Monolithic Integration of New Materials**:
- Introducing innovative materials (such as electro-optic polymers, phase change materials, etc.) to achieve superior device performance and reduce power consumption, but existing manufacturing processes are incompatible with standard silicon photonic foundry processes, making it impossible to directly apply existing passive and active photonic component design kits (PDKs).

### Solutions
- **Monolithic Backend Integration Technology**:
- By customizing the silicon photonic process flow, introducing silicon nitride as an etch stop layer to achieve low-loss etching of deep oxide trenches.
- Monolithically backend integrating two different chalcogenide phase change materials (Sb₂Se₃ and Ge₂Sb₂Se₄Te₁) into silicon photonic chips to achieve compact phase and intensity modulation units with zero static power consumption.

- **Non-Volatile Post-Processing Calibration**:
- Achieving non-volatile post-processing calibration through electrical programming to reduce phase errors in push-pull Mach-Zehnder interferometer switches and significantly reduce peak power consumption.

- **Multi-Level Non-Volatile Modulation**:
- Implementing Sb₂Se₃-based microring filters and Ge₂Sb₂Se₄Te₁-based waveguide broadband attenuators to achieve wavelength-selective intensity modulation with more than 5 bits and intensity modulation with more than 7 bits, respectively.

### Significance
- **Feasibility of Large-Scale Integration**:
- Providing a monolithic backend integration platform compatible with existing silicon photonic PDKs, paving the way for the development of future large-scale non-volatile reconfigurable optoelectronic chips.

- **Potential for Low-Power Applications**:
- Offering significant technical support for low-power, large-scale applications in fields such as optical computing, microwave photonics, and optical communication networks.

Through these methods, the paper not only demonstrates the practical application of monolithic backend integration technology but also provides a clear path for the integration of other excellent optoelectronic materials (such as quantum dots, barium titanate, lithium niobate, electro-optic polymers, and van der Waals materials).