Abstract:The emergence of integrated photonic technology provides an attractive solution of high speed, broad bandwidth and strong parallelism for large-scale information transmission and processing in interconnection, communication and computing. Reconfigurability is necessary for photonic processors to adapt varieties of application scenarios in the fields of data exchange, microwave photonics and neural networks. As yet, thermo-optical effect and carrier plasma dispersion effect are the most common phenomena for optical modulation. However, the volatility not only requires continuous power supply to maintain the devices’ state, but also accompanies with serious thermal crosstalk induced by active regions. Hence, the nonvolatile methods that can reconfigure and fix on the current state for a long time after a single external excitation are considered as one of the significant technologies in the next generation of integrated photonics. Nonvolatile reconfiguration has been achieved through trapped-charge effect, bistable micro-electromechanical system (MEMS) with nano-latch mechanism and ferroelectric materials, which suffer from high loss, lower stability and complex process flow. Chalcogenide phase change materials (PCM) have become a promising method to realize compact and nonvolatile reconfigurable integrated photonic devices due to the high optical constant contrast between amorphous state and crystalline state, superiorly stable property and low temperature deposition possibility. Here, we developed a monolithic back-end-of-line integration technology of PCM in silicon photonics, supporting "Zero-change" heterogeneous integration platform at wafer scale. On this basis, nonvolatile integrated photonic devices with excellent performance have been fabricated. It lays a foundation for improving the energy efficiency and integration density of integrated photonic processors and suppressing thermal crosstalk between integrated photonic devices.

Toward accurate thermal modeling of phase change material based photonic devices

A New Model of Phase Change Process for Thermal Energy Storage

Performance Limits of Phase Change Integrated Photonics

A scheme for simulating multi-level phase change photonics materials

Advances in Photonic Devices Based on Optical Phase-Change Materials

Phase Change Materials in Photonic Devices

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

Robust electrothermal switching of optical phase change materials through computer-aided adaptive pulse optimization

Roadmap for Phase Change Materials in Photonics and Beyond

Spatial and temporal control of glassy‐crystalline domains in optical phase change materials

Low Energy Switching of Phase Change Materials Using a 2D Thermal Boundary Layer

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Phase-change materials for photonic applications

Reconfigurable inverse designed phase-change photonics

Non-volatile tunable optics by design: From chalcogenide phase-change materials to device structures

Fundamentals and Applications of Chalcogenide Phase-Change Material Photonics

Study on Thermophysical Properties and Phase Change Regulation Mechanism of Optically-Controlled Phase Change Materials: Synthesis, Crystal Structure and Molecular Dynamics

Nonvolatile Reconfigurable Phase-change-materials Integrated Silicon Photonics

Approaching High-efficiency Spatial Light Modulation with Lossy Phase-change Material

Thermal dynamics of phase switching process of an SOI rib waveguide covered with a Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> phase change material film