Abstract:In the past decade, there has been tremendous progress in integrating chalcogenide phase-change materials (PCMs) on the silicon photonic platform for non-volatile memory to neuromorphic in-memory computing applications. In particular, these non von Neumann computational elements and systems benefit from mass manufacturing of silicon photonic integrated circuits (PICs) on 8-inch wafers using a 130 nm complementary metal-oxide semiconductor line. Chip manufacturing based on deep-ultraviolet lithography and electron-beam lithography enables rapid prototyping of PICs, which can be integrated with high-quality PCMs based on the wafer-scale sputtering technique as a back-end-of-line process. In this article, we present an overview of recent advances in waveguide integrated PCM memory cells, functional devices, and neuromorphic systems, with an emphasis on fabrication and integration processes to attain state-of-the-art device performance. After a short overview of PCM based photonic devices, we discuss the materials properties of the functional layer as well as the progress on the light guiding layer, namely, the silicon and germanium waveguide platforms. Next, we discuss the cleanroom fabrication flow of waveguide devices integrated with thin films and nanowires, silicon waveguides and plasmonic microheaters for the electrothermal switching of PCMs and mixed-mode operation. Finally, the fabrication of photonic and photonic–electronic neuromorphic computing systems is reviewed. These systems consist of arrays of PCM memory elements for associative learning, matrix-vector multiplication, and pattern recognition. With large-scale integration, the neuromorphicphotonic computing paradigm holds the promise to outperform digital electronic accelerators by taking the advantages of ultra-high bandwidth, high speed, and energy-efficient operation in running machine learning algorithms.

All-Optical Phase-Change Memory with Improved Performance by Plasmonic Effect

Plasmonically-enhanced all-optical integrated phase-change memory

Performance Limits of Phase Change Integrated Photonics

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

Design of plasmonic enhanced all-optical phase-change memory for secondary storage applications

Electronically Reconfigurable Photonic Switches Incorporating Plasmonic Structures and Phase Change Materials

Improved optical contrast of plasmonic phase change memory using a Fabry-Perot cavity

On-Chip Integrated Photonic Devices Based on Phase Change Materials

Non‐Volatile Reconfigurable Integrated Photonics Enabled by Broadband Low‐Loss Phase Change Material

Advances in Photonic Devices Based on Optical Phase-Change Materials

Magnetron-sputtered and Thermal-Evaporated Low-Loss Sb-Se Phase-Change Films in Non-Volatile Integrated Photonics

In-memory Computing Based on Photonic-Electronic Hybrid Phase-Change Cells.

Phase Change Material Photonics

Melting-free integrated photonic memory with layered polymorphs

Exploring Phase‐Change Memory: from Material Systems to Device Physics

Reconfigurable inverse designed phase-change photonics

Fabrication and Integration of Photonic Devices for Phase-Change Memory and Neuromorphic Computing

Nonvolatile plasmonics based on optically reprogrammable phase change materials

A scheme for simulating multi-level phase change photonics materials

Neuromorphic Photonic Memory Devices Using Ultrafast, Non‐volatile Phase‐change Materials

Low Energy Switching of Phase Change Materials Using a 2D Thermal Boundary Layer