Improved optical contrast of plasmonic phase change memory using a Fabry-Perot cavity

Xu Yan,Yegang Lu

DOI: https://doi.org/10.1364/oe.517544

IF: 3.8

2024-05-04

Optics Express

Abstract:Xu Yan, Yegang Lu As a promising technology to realize multilevel, non-volatile data storage and information processing, optical phase change technologies ... [Opt. Express 32, 18224-18236 (2024)]

optics

What problem does this paper attempt to address?

All-Optical Phase-Change Memory with Improved Performance by Plasmonic Effect

Wei Sun,Yegang Lu,Libo Miao,Yu Zhang

DOI: https://doi.org/10.3390/photonics9030132

IF: 2.536

2022-02-25

Photonics

Abstract:The combination of the integrated waveguide and phase-change materials (PCMs) provides a promising platform for reconfigurable and multifunctional photoelectric devices. Through plasmonic enhancement and the low loss propagation of the waveguide, the footprint and power consumption of the photoelectric device can be effectively improved. In this work, a metal double-ring structure embedded with phase change materials was proposed to utilize the plasmonic effect for enhancement of the light-matter interaction. In particular, the overall temperature difference in the PCM cell can be confined within 2 °C during the crystallization process, thus avoiding the interior heterogeneous crystallization. The insertion loss of the cell in amorphous and crystalline states at a wavelength of 1550 nm are 2.3 dB and 1.0 dB, respectively. A signal contrast ratio of 15.8% is achieved under the ultra-small footprint (50 × 90 nm2) at a wavelength of 1550 nm.

optics
Plasmonically-enhanced all-optical integrated phase-change memory

Emanuele Gemo,Santiago Garcia-Cuevas Carrillo,Carlota Ruiz De Galarreta,Anna Baldycheva,Hasan Hayat,Nathan Youngblood,Harish Bhaskaran,Wolfram H P Pernice,C David Wright

DOI: https://doi.org/10.1364/OE.27.024724

2019-08-19

Abstract:Integrated phase-change photonic memory devices offer a novel route to non-volatile storage and computing that can be carried out entirely in the optical domain, obviating the necessity for time and energy consuming opto-electrical conversions. Such memory devices generally consist of integrated waveguide structures onto which are fabricated small phase-change memory cells. Switching these cells between their amorphous and crystalline states modifies significantly the optical transmission through the waveguide, so providing memory, and computing, functionality. To carry out such switching, optical pulses are sent down the waveguide, coupling to the phase-change cell, heating it up, and so switching it between states. While great strides have been made in the development of integrated phase-change photonic devices in recent years, there is always a pressing need for faster switching times, lower energy consumption and a smaller device footprint. In this work, therefore, we propose the use of plasmonic enhancement of the light-matter interaction between the propagating waveguide mode and the phase-change cell as a means to faster, smaller and more energy-efficient devices. In particular, we propose a form of plasmonic dimer nanoantenna of significantly sub-micron size that, in simulations, offers significant improvements in switching speeds and energies. Write/erase speeds in the range 2 to 20 ns and write/erase energies in the range 2 to 15 pJ were predicted, representing improvements of one to two orders of magnitude when compared to conventional device architectures.
Design of plasmonic enhanced all-optical phase-change memory for secondary storage applications

Xiaojuan Lian,Cunhu Liu,Jinke Fu,Xiaoyan Liu,Qingying Ren,Xiang Wan,Wanang Xiao,Zhikuang Cai,Lei Wang

DOI: https://doi.org/10.1088/1361-6528/ac89f6

IF: 3.5

2022-09-21

Nanotechnology

Abstract:Phase-change optical device has recently gained tremendous interest due to its ultra-fast transmitting speed, multiplexing and large bandwidth. However, majority of phase-change optical devices are only devoted to on-chip components such as optical tensor core and optical main memory, while developing a secondary storage memory in an optical manner is rarely reported. To address this issue, we propose a novel phase-change optical memory based on plasmonic resonance effects for secondary storage applications. Such design makes use of the plasmonic dimer nanoantenna to generate plasmonic resonance inside the chalcogenide alloy, and thus enables the performance improvements in terms of energy consumption and switching speed. It is found that choosing height, radius, and separation of the plasmonic nanoantenna as 10 nm, 150 nm, and 10 nm, respectively, allows for a write/erase energies of 100 and 240 pJ and a write/erase speed of 10 ns for crystallization and amorphization processes, respectively. Such performance merits encouragingly prevail conventional secondary storage memories and thus pave a route towards the advent of all-optical computer in near future.
Electronically Reconfigurable Photonic Switches Incorporating Plasmonic Structures and Phase Change Materials

Nikolaos Farmakidis,Nathan Youngblood,June Sang Lee,Johannes Feldmann,Alessandro Lodi,Xuan Li,Samarth Aggarwal,Wen Zhou,Lapo Bogani,Wolfram Hp Pernice,C David Wright,Harish Bhaskaran

DOI: https://doi.org/10.1002/advs.202200383

Abstract:The ever-increasing demands for data processing and storage will require seamless monolithic co-integration of electronics and photonics. Phase-change materials are uniquely suited to fulfill this function due to their dual electro-optical sensitivity, nonvolatile retention properties, and fast switching dynamics. The extreme size disparity however between CMOS electronics and dielectric photonics inhibits the realization of efficient and compact electrically driven photonic switches, logic and routing elements. Here, the authors achieve an important milestone in harmonizing the two domains by demonstrating an electrically reconfigurable, ultra-compact and nonvolatile memory that is optically accessible. The platform relies on localized heat, generated within a plasmonic structure; this uniquely allows for both optical and electrical readout signals to be interlocked with the material state of the PCM while still ensuring that the writing operation is electrically decoupled. Importantly, by miniaturization and effective thermal engineering, the authors achieve unprecedented energy efficiency, opening up a path towards low-energy optoelectronic hardware for neuromorphic and in-memory computing.
On-Chip Integrated Photonic Devices Based on Phase Change Materials

Muhammad Shemyal Nisar,Xing Yang,Liangjun Lu,Jianping Chen,Linjie Zhou

DOI: https://doi.org/10.3390/photonics8060205

IF: 2.536

2021-01-01

Photonics

Abstract:Phase change materials present a unique type of materials that drastically change their electrical and optical properties on the introduction of an external electrical or optical stimulus. Although these materials have been around for some decades, they have only recently been implemented for on-chip photonic applications. Since their reinvigoration a few years ago, on-chip devices based on phase change materials have been making a lot of progress, impacting many diverse applications at a very fast pace. At present, they are found in many interesting applications including switches and modulation; however, phase change materials are deemed most essential for next-generation low-power memory devices and neuromorphic computational platforms. This review seeks to highlight the progress thus far made in on-chip devices derived from phase change materials including memory devices, neuromorphic computing, switches, and modulators.
Photonic non-volatile memories using phase change materials

Wolfram Pernice,Harish Bhaskaran

DOI: https://doi.org/10.1063/1.4758996

2012-08-07

Abstract:We propose an all-photonic, non-volatile memory and processing element based on phase-change thin-films deposited onto nanophotonic waveguides. Using photonic microring resonators partially covered with Ge2Sb2Te5 (GST) multi-level memory operation in integrated photonic circuits can be achieved. GST provides a dramatic change in refractive index upon transition from the amorphous to crystalline state, which is exploited to reversibly control both the extinction ratio and resonance wavelength of the microcavity with an additional gating port in analogy to optical transistors. Our analysis shows excellent sensitivity to the degree of crystallization inside the GST, thus providing the basis for non-von Neuman neuromorphic computing.

Optics
Plasmon‐Assisted Self‐Encrypted All‐Optical Memory (Adv. Funct. Mater. 2/2023)

Chengyun Zhang,Min Ji,Xilin Zhou,Xiaohu Mi,Huan Chen,Baobao Zhang,Zhengkun Fu,Zhenglong Zhang,Hairong Zheng

DOI: https://doi.org/10.1002/adfm.202370009

IF: 19

2023-01-12

Advanced Functional Materials

Abstract:Optical Responsive Nanomaterials In article number 2208561, Zhang, Zheng, and co‐workers report that a self‐encrypted all‐optical memory with ultrahigh switching contrast is realized in Y2O3:Eu3+‐Au. All‐optical information revisable writing, reading, encryption and re‐writing are realized by a change of light power. This study not only provides insight into the unique thermal response of the plasmon resonance in the composite structure but also offers good candidates for self‐encrypted binary information storage.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Resonant Multilevel Optical Switching with Phase Change Material GST

Di Wu,Xing Yang,Ningning Wang,Liangjun Lu,Jianping Chen,Linjie Zhou,B. M. Azizur Rahman

DOI: https://doi.org/10.1515/nanoph-2022-0276

2022-01-01

Abstract:We demonstrate a multilevel optical memristive switch based on a silicon Fabry-Perot resonator. The resonator is constructed by a pair of waveguide Bragg gratings at the ends of a multimode interferometer (MMI) covered with sub-micrometer-size Ge2Sb2Te5 (GST) thin film on top. The interaction between the optical field and GST is greatly enhanced due to the resonant effect. The GST phase transition is triggered by applying electrical pulses to the doped-silicon microheater. Light is transmitted when GST is amorphous while it is highly absorbed by the crystalline GST at the resonance wavelength, leading to a higher on-off extinction ratio (ER) compared to the non-resonant device. The resonant device achieves a maximum transmission contrast of 10.29 dB and a total of 38 distinct nonvolatile switching levels. Our work provides an effective solution to improving the multilevel switching performance of phase-change devices and paves the way for future nonvolatile silicon photonics devices.
Neuromorphic Photonic Memory Devices Using Ultrafast, Non‐volatile Phase‐change Materials

Xiaozhang Chen,Yuan Xue,Yibo Sun,Jiabin Shen,Sannian Song,Min Zhu,Zhitang Song,Zengguang Cheng,Peng Zhou

DOI: https://doi.org/10.1002/adma.202203909

IF: 29.4

2022-06-19

Advanced Materials

Abstract:The search for ultra‐fast photonic memory devices is inspired by the ever‐increasing number of cloud computing, supercomputing, and artificial intelligence applications, together with the unique advantages of signal processing in the optical domain such as high speed, large bandwidth, and low energy consumption. By embracing silicon photonics with chalcogenide phase‐change materials (PCMs), non‐volatile integrated photonic memory has been developed with promising potential in photonic integrated circuits and nanophotonic applications. While conventional PCMs suffer from slow crystallization speed, scandium‐doped antimony telluride (SST) has recently been developed for ultrafast phase‐change random‐access memory applications. We demonstrate an ultrafast non‐volatile photonic memory based on an SST thin film with a 2‐ns write/erase speed—which is the fastest write/erase speed ever reported in integrated phase‐change photonic devices. SST‐based photonic memories exhibit multi‐level capabilities and good stability at room temperature. By mapping the memory level to the biological synapse weight, an artificial neural network based on photonic memory devices is successfully established for image classification. Additionally, we demonstrate a reflective nanodisplay application using SST with optoelectronic modulation capabilities. Both the optical and electrical changes in SST during the phase transition and the fast‐switching speed demonstrate their potential for use in photonic computing, neuromorphic computing, nanophotonics, and optoelectronic applications. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Thin film ferroelectric photonic-electronic memory

Gong Zhang,Yue Chen,Zijie Zheng,Rui Shao,Jiuren Zhou,Zuopu Zhou,Leming Jiao,Jishen Zhang,Haibo Wang,Qiwen Kong,Chen Sun,Kai Ni,Jixuan Wu,Jiezhi Chen,Xiao Gong

DOI: https://doi.org/10.1038/s41377-024-01555-6

2024-08-23

Abstract:Abstract To reduce system complexity and bridge the interface between electronic and photonic circuits, there is a high demand for a non-volatile memory that can be accessed both electrically and optically. However, practical solutions are still lacking when considering the potential for large-scale complementary metal-oxide semiconductor compatible integration. Here, we present an experimental demonstration of a non-volatile photonic-electronic memory based on a 3-dimensional monolithic integrated ferroelectric-silicon ring resonator. We successfully demonstrate programming and erasing the memory using both electrical and optical methods, assisted by optical-to-electrical-to-optical conversion. The memory cell exhibits a high optical extinction ratio of 6.6 dB at a low working voltage of 5 V and an endurance of 4 × 10 4 cycles. Furthermore, the multi-level storage capability is analyzed in detail, revealing stable performance with a raw bit-error-rate smaller than 5.9 × 10 −2 . This ground-breaking work could be a key technology enabler for future hybrid electronic-photonic systems, targeting a wide range of applications such as photonic interconnect, high-speed data communication, and neuromorphic computing.

optics
Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory

Tiantian Li,Yong Wang,Wei Li,Dun Mao,Chris J. Benmore,Igor Evangelista,Huadan Xing,Qiu Li,Feifan Wang,Ganesh Sivaraman,Anderson Janotti,Stephanie Law,Tingyi Gu

DOI: https://doi.org/10.1002/adma.202108261

IF: 29.4

2022-04-18

Advanced Materials

Abstract:The primary mechanism of optical memoristive devices relies on phase transitions between amorphous and crystalline states. The slow or energy-hungry amorphous-crystalline transitions in optical phase-change materials are detrimental to the scalability and performance of devices. Leveraging an integrated photonic platform, nonvolatile and reversible switching between two layered structures of indium selenide (In2 Se3 ) triggered by a single nanosecond pulse is demonstrated. The high-resolution pair distribution function reveals the detailed atomistic transition pathways between the layered structures. With interlayer "shear glide" and isosymmetric phase transition, switching between the α- and β-structural states contains low re-configurational entropy, allowing reversible switching between layered structures. Broadband refractive index contrast, optical transparency, and volumetric effect in the crystalline-crystalline phase transition are experimentally characterized in molecular-beam-epitaxy-grown thin films and compared to ab initio calculations. The nonlinear resonator transmission spectra measure of incremental linear loss rate of 3.3 GHz, introduced by a 1.5 µm-long In2 Se3 -covered layer, resulted from the combinations of material absorption and scattering.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Plasmon‐Assisted Self‐Encrypted All‐Optical Memory

Chengyun Zhang,Min Ji,Xilin Zhou,Xiaohu Mi,Huan Chen,Baobao Zhang,Zhengkun Fu,Zhenglong Zhang,Hairong Zheng

DOI: https://doi.org/10.1002/adfm.202208561

IF: 19

2022-11-22

Advanced Functional Materials

Abstract:A self‐encrypted all‐optical memory with ultrahigh switching contrast is realized in Y2O3:Eu3+–Au. All‐optical information revisible writing, reading, encryption, and re‐writting are realized through a simple change of the irradiation light power. This work not only provides insight into the unique thermal response of the plasmon resonance in the composite structure but also offers good candidates for self‐encrypted binary information storage. All‐optical responsive nanomaterials, which can rapidly switch between two stable states, have been regarded as the next‐generation memories due to their potential to realize binary information storage and implement on‐chip, integrated photonic neuromorphic systems. Rare earth oxides are preeminent candidates owing to their extraordinary luminescent stability and narrow optical transitions. However, due to the lack of simple and effective optical switches, it is difficult to realize all‐optical data storage, encoding, and retrieval by pure rare earth‐doped luminescent nanoparticles. Here, a rapid and high‐contrast of 104 luminescent switching of Y2O3:Eu3+ nanoparticle between the enhancement and quenching states is achieved by employing the strong light confinement and ultrafast thermal response of localized surface plasmon resonance. A self‐encrypted all‐optical memory is presented with optical information writing, encryption, reading, and re‐writing, and a high‐sensitivity synaptic response of emitters to frequency and light intensity flux, which can be harnessed to encrypt information flows and promote convenient and high‐security information encryption. Such a convenient and secure plasmonic thermally assisted self‐encrypting luminescent switch paves the way for constructing high‐performance stimuli‐responsive rare earth oxide crystals on demand and expanding their applications in various data encryption, anti‐counterfeiting, and rewritable colouration devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Laser-induced Phase-change Perovskite Photodetector Arrays for Optical Information Storage and Imaging

Chen Zou,Jiajiu Zheng,Cheng Chang,Arka Majumdar,Lih Y. Lin

DOI: https://doi.org/10.48550/arXiv.1812.09267

2018-12-09

Applied Physics

Abstract:The reversible phase transition between orthorhombic and cubic phases is demonstrated in all-inorganic perovskite CsPbIBr2 grown by a dual-source vapor-deposition method. The phase transition is actuated via heating and moisture exposure. The different crystal structures of two phases result in distinct optoelectronic properties including optical absorption, refractive index, and carrier transport. The perovskite photodetector array for the non-volatile rewritable optical memory application is further investigated. A near-infrared (NIR) laser ({\lambda} = 1064 nm) is used to selectively heat photodetector pixels through the photothermal effect of the interfacial Ag electrodes, resulting in an optically absorbing perovskite phase for the photodetectors. The locations of specific laser-written pixels can be read out by measuring their photocurrents, and the stored optical information can also be erased by moisture exposure. Finally, a proof-of-concept optical imaging application has been demonstrated using perovskite photodetector arrays fabricated on flexible PET substrates. These results show promising applications of vapor-deposited inorganic perovskite for optical memory and image sensors, with unique potential for low-cost manufacturing of large-area and/or flexible devices.
Exploring Phase‐Change Memory: from Material Systems to Device Physics

Yanyun Ren,Ruoyao Sun,Stephenie Hiu Yuet Chen,Chunyu Du,Su-Ting Han,Ye Zhou

DOI: https://doi.org/10.1002/pssr.202000394

2021-01-01

Abstract:To deal with the growing demand for data storage and processing, phase‐change memory (PCM) provides one of the most promising candidates for next‐generation nonvolatile data storage and neuromorphic computing applications. A lot of effort has been made toward optimizing the materials and device design; thus, excellent device performances have been achieved including high density, fast switching speed, great endurance, and retention. In addition, the widely tunable optical characteristics of PCMs are irresistibly attractive for optoelectronic or all‐optical applications with unprecedented bandwidth, low energy consumption, and multilevel data storage. Herein, the materials system and switching mechanisms on experimental and modeling methods for PCM designs and applications are discussed. Electric‐domain and optical‐domain PCM‐based artificial synapses/neurons and their applications in neuromorphic computing are also reviewed. Finally, the future prospects and challenges of PCM‐based applications on materials, devices, algorithms, and system levels are highlighted.
Nonvolatile plasmonics based on optically reprogrammable phase change materials

Jacek Gosciniak

DOI: https://doi.org/10.48550/arXiv.2112.09163

2021-12-17

Abstract:We propose here a new platform for a realization of novel nonvolatile optical switching devices that takes an advantage of high field confinement provided by plasmonics and multi-state programming capabilities of chalcogenide phase change materials. A high reduction in the overall energy consumption consists of a high field enhancement provided by plasmonic that allow to lower the switching energies and implementation of phase change materials that allow to operate under a zero-static power consumption. A combination of plasmonics and phase change materials provide additionally an essential improvement in terms of a switching time, attenuation contrast and possibility to perform a phase shift with the wide bandgap phase change materials. In most of the all-optical switching photonic devices, a switching mechanism is realized optically through heating of phase change materials. Here, two stage heating process is proposed that is based on the absorption of light by phase change materials itself, and a heat transfer from the metal stripe under an absorption of light by a metal. Thus, compared to any other previously presented optical switches, even a wide bandgap phase change materials that show zero absorption of light can be implemented in the proposed structure. The proposed plasmonic waveguide arrangement is extremely sensitive to any changes of the phase change material properties, thus, even a minor change of temperature provides an essential change in the transmitted light.

Optics,Emerging Technologies,Applied Physics
Melting-free integrated photonic memory with layered polymorphs

Kaleem Ullah,Qiu Li,Tiantian Li,Tingyi Gu

DOI: https://doi.org/10.1515/nanoph-2023-0725

IF: 7.5

2024-02-01

Nanophotonics

Abstract:Chalcogenide-based nonvolatile phase change materials (PCMs) have a long history of usage, from bulk disk memory to all-optic neuromorphic computing circuits. Being able to perform uniform phase transitions over a subwavelength scale makes PCMs particularly suitable for photonic applications. For switching between nonvolatile states, the conventional chalcogenide phase change materials are brought to a melting temperature to break the covalent bonds. The cooling rate determines the final state. Reversible polymorphic layered materials provide an alternative atomic transition mechanism for low-energy electronic (small domain size) and photonic nonvolatile memories (which require a large effective tuning area). The small energy barrier of breaking van der Waals force facilitates low energy, fast-reset, and melting-free phase transitions, which reduces the chance of element segregation-associated device failure. The search for such material families starts with polymorphic In 2 Se 3 , which has two layered structures that are topologically similar and stable at room temperature. In this perspective, we first review the history of different memory schemes, compare the thermal dynamics of phase transitions in amorphous-crystalline and In 2 Se 3 , detail the device implementations for all-optical memory, and discuss the challenges and opportunities associated with polymorphic memory.

optics,physics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Multilevel Photonic Transistor Memory Devices Based on 1D Electrospun Semiconducting Polymer /Perovskite Composite Nanofibers

Ender Ercan,Yan‐Cheng Lin,Li‐Che Hsu,Chun‐Kai Chen,Wen‐Chang Chen

DOI: https://doi.org/10.1002/admt.202100080

IF: 6.8

2021-06-04

Advanced Materials Technologies

Abstract:Photonic field-effect transistor (FET) memory devices offer unique advantages over conventional voltage-driven memory devices, such as noncontact programming capability, rapid data transmission, and low power consumption. In this article, the first example of a nanofiber-only photonic FET memory device is reported. Perovskite nanocrystal (βNC)-embedded polythiophenes are employed as 1D semiconducting channels of the nanofiber matrix. A decent On/Off current ratio of ≈103 is reached for the best device with a prolonged data retention of over 104 s, attributing to the favorable energy level alignment and molecular packing of conjugated polymers in nanofibers. The composite nanofiber system exhibits superior photoresponsivity and charge retention, outperforming its film-based counterpart owing to its regular 1D confined structure, and well-dispersed βNCs. Collectively, the structurally fine-tuned conjugated polymer and the 1D confined structure in the nanofiber promise good data discriminability and a highly fault-tolerant photonic memory device. In addition, the fiber-based flexible memory device exhibits excellent photonic memory performance, indicating its integrity for application in wearable electronics. The current system represents the first application of 1D perovskite nanocrystal/conjugated polymer composite nanofibers for high-performance photonic memory devices, which reveals their potential to make composite nanostructures for novel pioneering photonic applications.

materials science, multidisciplinary
Universal memory based on phase change materials: from phase change random access memory to optoelectronic hybrid storage

Bo Liu,Tao Wei,Jing Hu,Wanfei Li,Yun Ling,Qianqian Liu,Miao Cheng,Zhitang Song

DOI: https://doi.org/10.1088/1674-1056/ABEEDF

2021-01-01

Chinese Physics B

Abstract:The era of information explosion is coming and information need to be continuously stored and randomly accessed over long-term periods, which constitute an insurmountable challenge for existing data centers. At present, computing devices use the von Neumann architecture with separate computing and memory units, which exposes the shortcomings of "memory bottleneck". Nonvolatile memristor can realize data storage and in-memory computing at the same time and promises to overcome this bottleneck. Phase-change random access memory (PCRAM) is called one of the best solutions for next generation non-volatile memory. Due to its high speed, good data retention, high density, low power consumption, PCRAM has the broad commercial prospects in the in-memory computing application. In this review, the research progress of phase-change materials and device structures for PCRAM, as well as the most critical performances for a universal memory, such as speed, capacity, and power consumption, are reviewed. By comparing the advantages and disadvantages of phase-change optical disk and PCRAM, a new concept of optoelectronic hybrid storage based on phase-change material is proposed. Furthermore, its feasibility to replace existing memory technologies as a universal memory is also discussed as well.
Nonvolatile Phase Change Memory Nanocell Fabrication By Femtosecond Laser Writing Assisted With Near-Field Optical Microscopy

w j wang,rongkai zhao,l p shi,x s miao,p k tan,m h hong,t c chong,y h wu,yenting lin

DOI: https://doi.org/10.1063/1.2141649

IF: 2.877

2005-01-01

Journal of Applied Physics

Abstract:The phase change memory cells were developed by using a combination system of a femtosecond laser with near-field scanning optical microscopy. The memory cells with feature size varying from 800 nm down to 90 nm were achieved. The cell functional performances were tested, and the scalability of the programming current as a function of the memory cell features was investigated. The optical near-field distance which is one of the critical factors to achieve high resolution nanostructures was studied experimentally with the consideration of the whole fabrication process for functional devices. The Bethe-Bouwkamp model was employed to study the effects of the optical near-field distance to the nanostructure geometry. The programming current of 0.8 mA was observed for the memory nanocell at a feature size of 90 nm. (c) 2005 American Institute of Physics.
Multilevel nonvolatile optoelectronic memory based on memristive plasmonic tunnel junctions

Pan Wang,Mazhar E. Nasir,Alexey V. Krasavin,Wayne Dickson,Anatoly V. Zayats

DOI: https://doi.org/10.1021/acs.nanolett.9b03871

2018-11-08

Abstract:Highly efficient information processing in brain is based on processing and memory components called synapses, whose output is dependent on the history of the signals passed through them. Here we have developed an artificial synapse with both electrical and optical memory effects using reactive tunnel junctions based on plasmonic nanorods. In an electronic realization, the electrons tunneled into plasmonic nanorods under low bias voltage are harvested to write information into the tunnel junctions via hot-electron-mediated chemical reactions with the environment. In an optical realization, the information can also be written optically by external light illumination to excite hot electrons in plasmonic nanorods. The stored information is non-volatile and can be read in both realizations either electrically or optically by measuring the resistance or inelastic-tunnelling-induced light emission, respectively. These memristive light-emitting plasmonic tunnel junctions can be used as memory, logic units or artificial synapses in future optoelectronic or neuromorphic information systems.

Applied Physics,Optics

Improved optical contrast of plasmonic phase change memory using a Fabry-Perot cavity

All-Optical Phase-Change Memory with Improved Performance by Plasmonic Effect

Plasmonically-enhanced all-optical integrated phase-change memory

Design of plasmonic enhanced all-optical phase-change memory for secondary storage applications

Electronically Reconfigurable Photonic Switches Incorporating Plasmonic Structures and Phase Change Materials

On-Chip Integrated Photonic Devices Based on Phase Change Materials

Photonic non-volatile memories using phase change materials

Plasmon‐Assisted Self‐Encrypted All‐Optical Memory (Adv. Funct. Mater. 2/2023)

Resonant Multilevel Optical Switching with Phase Change Material GST

Neuromorphic Photonic Memory Devices Using Ultrafast, Non‐volatile Phase‐change Materials

Thin film ferroelectric photonic-electronic memory

Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory

Plasmon‐Assisted Self‐Encrypted All‐Optical Memory

Laser-induced Phase-change Perovskite Photodetector Arrays for Optical Information Storage and Imaging

Exploring Phase‐Change Memory: from Material Systems to Device Physics

Nonvolatile plasmonics based on optically reprogrammable phase change materials

Melting-free integrated photonic memory with layered polymorphs

Multilevel Photonic Transistor Memory Devices Based on 1D Electrospun Semiconducting Polymer /Perovskite Composite Nanofibers

Universal memory based on phase change materials: from phase change random access memory to optoelectronic hybrid storage

Nonvolatile Phase Change Memory Nanocell Fabrication By Femtosecond Laser Writing Assisted With Near-Field Optical Microscopy

Multilevel nonvolatile optoelectronic memory based on memristive plasmonic tunnel junctions