Multilevel Photonic Transistor Memory Devices Based on 1D Electrospun Semiconducting Polymer /Perovskite Composite Nanofibers

Ender Ercan,Yan‐Cheng Lin,Li‐Che Hsu,Chun‐Kai Chen,Wen‐Chang Chen
DOI: https://doi.org/10.1002/admt.202100080
IF: 6.8
2021-06-04
Advanced Materials Technologies
Abstract:<p>Photonic field-effect transistor (FET) memory devices offer unique advantages over conventional voltage-driven memory devices, such as noncontact programming capability, rapid data transmission, and low power consumption. In this article, the first example of a nanofiber-only photonic FET memory device is reported. Perovskite nanocrystal (βNC)-embedded polythiophenes are employed as 1D semiconducting channels of the nanofiber matrix. A decent On/Off current ratio of ≈10<sup>3</sup> is reached for the best device with a prolonged data retention of over 10<sup>4</sup> s, attributing to the favorable energy level alignment and molecular packing of conjugated polymers in nanofibers. The composite nanofiber system exhibits superior photoresponsivity and charge retention, outperforming its film-based counterpart owing to its regular 1D confined structure, and well-dispersed βNCs. Collectively, the structurally fine-tuned conjugated polymer and the 1D confined structure in the nanofiber promise good data discriminability and a highly fault-tolerant photonic memory device. In addition, the fiber-based flexible memory device exhibits excellent photonic memory performance, indicating its integrity for application in wearable electronics. The current system represents the first application of 1D perovskite nanocrystal/conjugated polymer composite nanofibers for high-performance photonic memory devices, which reveals their potential to make composite nanostructures for novel pioneering photonic applications.</p>
materials science, multidisciplinary
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