High-bandwidth Light Inputting Multilevel Photoelectric Memory Based on Thin-Film Transistor with a Floating Gate of CsPbBr3/CsPbI3 Blend Quantum Dots

Junxiang Pei,Xiaohan Wu,Jingyong Huo,Wen-Jun Liu,David Wei Zhang,Shi-Jin Ding
DOI: https://doi.org/10.1088/1361-6528/abc6e0
IF: 3.5
2021-01-01
Nanotechnology
Abstract:The electronic-photonic convergent systems can overcome the data transmission bottleneck for microchips by enabling processor and memory chips with high-bandwidth optical input/output. However, current silicon-based electronic-photonic systems require various functional devices/components to convert high-bandwidth optical signals into electrical ones, thus making further integrations of sophisticated systems rather difficult. Here, we demonstrate thin-film transistor-based photoelectric memories employing CsPbBr3/CsPbI3 blend perovskite quantum dots (PQDs) as a floating gate, and multilevel memory cells are achieved under programming and erasing modes, respectively, by imputing high-bandwidth optical signals. For different bandwidth light input (i.e. 500-550, 575-650 and 675-750 nm) with the same intensity, three levels of programming window (i.e. 3.7, 1.9 and 0.8 V) and erasing window (i.e. -1.9, -0.6 and -0.1 V) are obtained under electrical pulses, respectively. This is because the blend PQDs have two different bandgaps, and different amounts of photo-generated carriers can be produced for different wavelength optical inputs. It is noticed that the 675-750 nm light inputs have no effects on both programming and erasing windows because of no photo-carriers generation. Four memory states are demonstrated, showing enough large gaps (1.12-5.61 V) between each other, good data retention and programming/erasing endurance. By inputting different optical signals, different memory states can be switched easily. Therefore, this work directly demonstrates high-bandwidth light inputting multilevel memory cells for novel electronic-photonic systems.
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