Abstract:Abstract The retention-of-state functionality provided by memories is fundamental to any Turing machine and neural network, hence is critical for any information system today. While emerging optical machine learning accelerators and photonic neuromorphic computing paradigms provide promising signal processing and computing performance, the lack of a photon-photon force in the universe makes storing optical information challenging. Fortunately, phase change materials provide such a missing memristive nonvolatile function via their reconfigurable crystalline structure and allow for rapid optical READ paradigms. However, demonstrations of photonic memory are limited by high optical loss, low state-cyclability, and rely on cumbersome non-CMOS like optical programmability. To overcome all three shortcomings and unlock the full potential of optical information storage and access, here we introduce a photonic random-access memory featuring vanishing low optical loss, demonstrate more than half a million switching cycles, a 100x improvement over state-of-art, and realize electrical programmability on-chip. The exceedingly low optical absorption (0.0015 dB/μm) is achieved via a novel broadband transparent phase change material, Ge2Sb2Se5 integrated atop a nanophotonic waveguide of a silicon chip. We show a highly efficient signal modulation (0.2 dB/μm) achieved by realizing a newly designed paired micro-heaters along both sides of waveguide, which allows for electronic-standard programmability of these photonic memories. When interrogated by an optical beam, they offer picosecond-short memory READ latency. Furthermore, we demonstrate a partial amorphization scheme realizing multi-state memory levels on a single heater enhancing footprint efficiency. Lastly, we verify the energy and switching speed and show how each trades-off with heater-to-waveguide proximity and signal strength, respectively. Such as CMOS-near electronically programmed and optical read photonic random-access memory with low-optical loss yet efficient programmability can become a crucial building block for network edge AI system of the looming industry 4.0 era.

Seven Bit Nonvolatile Electrically Programmable Photonics Based on Phase-Change Materials for Image Recognition

Electrically Programmable Phase-Change Photonic Memory for Optical Neural Networks with Nanoseconds in Situ Training Capability

High‐Resolution Optical Convolutional Neural Networks Using Phase‐Change Material‐Based Microring Hybrid Waveguides

Neuromorphic Photonic Memory Devices Using Ultrafast, Non‐volatile Phase‐change Materials

Neuromorphic Photonics Based on Phase Change Materials

Non-volatile and Reconfigurable On-Chip Optical Digital Neural Network Based on Sb2Se3-assisted Phase Shifters

In-memory photonic dot-product engine with electrically programmable weight banks

Six Bit Optical Phase States Realized in Nonvolatile Phase Shifter Based on N-Doped Sb2Se3

A High-Speed 2D Optoelectronic In-Memory Computing Device with 6-Bit Storage and Pattern Recognition Capabilities

All-Optical Synapse with Directional Coupler Structure Based on Phase Change Material

Electrical Programmable Low-loss high cyclable Nonvolatile Photonic Random-Access Memory

Self-powered Photonic Synapses with Rapid Optical Erasing Ability for Neuromorphic Visual Perception

High-Speed Multifunctional Photonic Memory on a Foundry-Processed Photonic Platform

Fabrication and Integration of Photonic Devices for Phase-Change Memory and Neuromorphic Computing

Photonic non-volatile memories using phase change materials

Multilevel weight optimization of photonic synapses based on slot-ridge waveguides with multi-block GST

Photoprogrammed Multifunctional Optoelectronic Synaptic Transistor Arrays Based on Photosensitive Polymer‐Sorted Semiconducting Single‐Walled Carbon Nanotubes for Image Recognition

Neuromorphic Computing Using a Floating Gate Modulated Photoelectric Synaptic Transistor

On-chip ultra-compact nonvolatile photonic synapse

Structural Optimization of Integrated Non-Volatile Photonic Memory Towards High Storage Density and Low Energy Consumption

Chalcogenide phase-change devices for neuromorphic photonic computing