Abstract:The failure mechanism of thermal gate oxide in silicon carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs), whether it is field-driven breakdown or charge-driven breakdown, has always been a controversial topic. Previous studies have demonstrated that the failure time of thermally grown silicon dioxide (SiO2) on SiC stressed with a constant voltage is indicated as charge driven rather than field driven through the observation of Weibull Slope β. Considering the importance of the accurate failure mechanism for the thermal gate oxide lifetime prediction model of time-dependent dielectric breakdown (TDDB), charge-driven breakdown needs to be further fundamentally justified. In this work, the charge-to-breakdown (QBD) of the thermal gate oxide in a type of commercial planar SiC power MOSFETs, under the constant current stress (CCS), constant voltage stress (CVS), and pulsed voltage stress (PVS) are extracted, respectively. A mathematical electron trapping model in thermal SiO2 grown on single crystal silicon (Si) under CCS, which was proposed by M. Liang et al., is proven to work equally well with thermal SiO2 grown on SiC and used to deduce the QBD model of the device under test (DUT). Compared with the QBD obtained under the three stress conditions, the charge-driven breakdown mechanism is validated in the thermal gate oxide of SiC power MOSFETs.

Charging/discharging Induced Premature Breakdown/recovery in Si Nanocrystals Embedded in SiO 2 Matrix

Charging/Discharging of Silicon Nanocrystals Embedded in an Sio2 Matrix Inducing Reduction/Recovery in the Total Capacitance and Tunneling Current

Modulation of Capacitance Magnitude by Charging/Discharging in Silicon Nanocrystals Distributed Throughout the Gate Oxide in MOS Structures

Charge storage in Si-nanocrystals embedded NOS structure characterized by Kelvin probe force microscopy

Modeling of Lateral Charge Transfer in Si Nanocrystals in SiO2 Thin Film

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

Charging Effect on Electroluminescence Performance of Nc-Si/a-sio2 Films

Performance and reliability feature of nanocrystal memory devices

Nanocrystal formation in Si implanted thin SiO2 layers under the influence of an absorbing interface

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Breakdown Voltage of Ultrathin Dielectric Film Subject to Electrostatic Discharge Stress

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

Formation and Charging Effect of Si Nanocrystals in A-Sinx/a-si/a-sinx Structures

The Periodicity Effect on the Charge Storage Characteristic of Multistacked Nc-Si Floating Gate.