Abstract:Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters into sub-10nm technology node. From 3nm technology node and beyond, gate all around field effect transistor steps onto the history stage attributed to its improved SCE suppressing ability thanks to surrounding gate structure. Herein, we demonstrate the super electrostatic control ability of a double-gated nanotube gate all around field effect transistor (DG NT GAAFET) in comparison with nanotube (NT GAAFET) and nanowire gate all around field effect transistor (NW GAAFET) with the same device parameters designed. Ion boosts of 62% and 57% have been obtained in DG NT GAAFET in comparison with those of NT GAAFET and NW GAAFET. Besides, substantially suppressed SCEs have been obtained in DG NT GAAFET due to enhanced electrostatic control, which are certificated by improved Ioff, SS, and Ion/Ioff ratio obtained. On the other hand, the Ion of NT GAAFET is comparable with that of NW GAA-FET. Whereas, its Ioff is 1 order smaller, and SS is almost 2 times smaller compared with those of NW GAA-FET, manifesting the meliority of nanotube channel structure. In the end, the robustness of nanotube channel structure, especially double gated one, against Lg scaling has been verified with TCAD simulation study.

Electrostatic Discharge (ESD) Protection Challenges of Gate-All-Around Nanowire Field-Effect Transistors

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

Investigation on Electrostatic Discharge Robustness of Gate-All-Around Silicon Nanowire Transistors Combined with Thermal Analysis

Ggnmos As Esd Protection in Different Nanometer Cmos Process

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Research on Electrostatic Discharge Characteristics of Tunnel Field Effect Transistors

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Gate Electrostatic Controllability Enhancement in Nanotube Gate all Around Field Effect Transistor

Effects of Finger Width and Metal Routing of GGNMOS on ESD Protection

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

FOD Based ESD Protection Devices in Deep Sub-micron Technology

An Overview of ESD Protection in Nanometer IC

Esd Robustness Of Silicon Nanowire Transistor (Snwt) Combined With Thermal Analysis And Optimization

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

ESD Protection of NMOS Device at Different Gate Bias

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

Design of A Gate-Coupled Electrostatic Discharge Protection Structure