Abstract:The gate-all-around (GAA) silicon nanowire transistor (SNWT) is considered one of the best candidates for ultimately scaled CMOS devices at the end of the technology roadmap. This paper reviews our recent work on the key issues regarding SNWTs from the top-down approach including process integration, carrier transport, and fluctuation and variability in these unique one-dimensional strongly-confined nanowire devices. A new process integration scheme for SNWTs is discussed, which features a fully-Si-bulk substrate, an epi-free process, a self-aligned structure and a large source/drain fan-out. The physical characteristics of the fabricated devices with 10-nm-diameter nanowires are further investigated. The carrier transport performance in SNWTs is experimentally estimated, with a modified extraction methodology which takes into account the impact of temperature dependence of parasitic source resistance. SNWTs with sub-40-nm gate lengths exhibit high ballistic efficiency at room temperature, indicating great potential for SNWTs as an alternative device structure for near-ballistic transport. For heat transfer in SNWTs, the self-heating effect is also characterized. However, due to the one-dimensional (1-D) nature of nanowires and increased phonon-boundary scattering in the GAA structure, the self-heating effect in SNWTs based on the bulk substrate is comparable or even a little bit worse than SOI devices, which may limit the ultimate performance of SNWT-based circuits and thus, special design consideration is expected. On the other hand, random variation has become a practical problem at nano-scale. The characteristic variability of SNWTs is experimentally studied in detail. The results of extracted variation sources indicate that, with suppressed random dopant fluctuations in the intrinsic channel, variations in radius and metal-gate work function of SNWTs dominate both the threshold voltage and on-current fluctuations. Comparing with conventional planar MOS devices, SNWT based SRAM cells exhibit better stability due to the superior electrostatic control in SNWTs.

Esd Robustness Of Silicon Nanowire Transistor (Snwt) Combined With Thermal Analysis And Optimization

Investigation on Electrostatic Discharge Robustness of Gate-All-Around Silicon Nanowire Transistors Combined with Thermal Analysis

High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate from Top-Down Approach: Simulation and Fabrication

Fabrication and Transport Behavior Investigation of Gate-All-Around Silicon Nanowire Transistor from Top-Down Approach

Investigation of Gate-All-around Silicon Nanowire Transistors for Ultimately Scaled CMOS Technology from Top-Down Approach

Investigation on self-heating effect in carbon nanotube field-effect transistors

Self-heating effect and characteristic variability of gate-all-around silicon nanowire transistors for highly-scaled CMOS technology (invited)

Experimental Study On Quasi-Ballistic Transport In Silicon Nanowire Transistors And The Impact Of Self-Heating Effects

Investigation on Self-Heating Effect in Gate-All-Around Silicon Nanowire MOSFETs from Top-Down Approach

Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain

Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors

Variability investigation of gate-all-around silicon nanowire transistors from top-down approach

Self-Heating Effects In Gate-All-Around Silicon Nanowire Mosfets: Modeling And Analysis

HCI and NBTI Induced Degradation in Gate-All-around Silicon Nanowire Transistors

Investigation of Analog/RF Performance and Reliability Behavior of Silicon Nanowire MOSFETs

Investigation of Sub-10-nm Diameter, Gate-All-Around Nanowire Field-Effect Transistors for Electrostatic Discharge Applications

Experimental Investigations on Channel Backscattering Characteristics of Gate-All-around Silicon Nanowire Transistors from Top-Down Approach

Study of low frequency noise behavior in silicon nanowire transistors fabricated with top-to-down approach

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Electrostatic Discharge (ESD) Protection Challenges of Gate-All-Around Nanowire Field-Effect Transistors

New Self-Aligned Silicon Nanowire Transistors On Bulk Substrate Fabricated By Epi-Free Compatible Cmos Technology: Process Integration, Experimental Characterization Of Carrier Transport And Low Frequency Noise