Abstract:Three-dimensional (3-D) NAND flash technology has been attracting much attention in recent years, for it overcomes the challenges of scaling limitation faced by 2-D NAND flash and meets the demand of higher storage density and lower bit cost. Several 3-D NAND flash architectures has been proposed recently. [1-3] However, most of these structures have adopted poly-crystalline silicon (poly-Si) as the channel material, which has interface traps distributing along the random grain boundary (GB). Previous study has shown that these GB traps can cause the fluctuations in electrical characteristics and result in a wider distribution of threshold voltage (V th ) for NAND flash memory [4], [5], where only the intrinsic V th of the memory structure is analyzed. In this paper, we utilize 3-D simulation to examine the impact of GB with various positions on V th of different storage states in a multi-level cell (MLC) NAND flash memory.

The Impact of RTS on the Vt Variation of 65nm MLC NOR Flash Memory

The Impact of Random Telegraph Signals on the Threshold Voltage Variation of 65 Nm Multilevel nor Flash Memory

Random Telegraph Noise on the Threshold Voltage of Multi-Level Flash Memory

Evaluation of SRAM V-min Shift Induced by Random Telegraph Noise (RTN): Physical Understanding and Prediction Method

A Novel Structure for Beyond-45 Nm nor Flash Technology Featuring Short Channel Effect Immunity and Low Random Telegraph Signal Noise

RTN Impacts on RRAM-based Nonvolatile Logic Circuit

Investigation of On-Pitch SGD Structure Induced Vth Distribution Tails Downshift in 3D NAND Flash Memory

RTS Amplitudes in Decanano N-Mosfets with Conventional and High-K Gate Stacks

Impact of low temperature on the TSG Vt shift during erase cycling of 3-D NAND Flash memory

Study of a Phenomenon of High Error WL in Mixed Read and Program Operations in 3-D NAND Flash

Process optimization for random threshold voltage variation reduction in nanoscale MOSFET by 3D simulation

Improvement of VRT immunity using low 10-boron word line in recent DRAM

Investigation of the impact of grain boundary on threshold voltage of 3-D MLC NAND flash memory

Characteristics of Random Telegraph Signals in NMOSFETs with Ultra Narrow Channels

A Threshold Voltage Deviation Monitoring Scheme of Bit Transistors in 6T SRAM for Manufacturing Defects Detection

Impact of Temperature and Process Corners on Read Bit Line of 8T-SRAM Cell for NOR, NAND Operations

Impacts of Short-Channel Effects on the Random Threshold Voltage Variation in Nanoscale Transistors

Investigation of a New Disturb Effect in the Aggressively Scaled Dual-Bit/Cell Split-Gate Floating-Gate Flash Cell

Rowhammer Vulnerability of DRAMs in 3-D Integration

Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance