Abstract:This paper summarizes our work on experimentally characterizing, mitigating, and recovering read disturb errors in multi-level cell (MLC) NAND flash memory, which was published in DSN 2015, and examines the work's significance and future potential. NAND flash memory reliability continues to degrade as the memory is scaled down and more bits are programmed per cell. A key contributor to this reduced reliability is read disturb, where a read to one row of cells impacts the threshold voltages of unread flash cells in different rows of the same block. For the first time in open literature, this work experimentally characterizes read disturb errors on state-of-the-art 2Y-nm (i.e., 20-24 nm) MLC NAND flash memory chips. Our findings (1) correlate the magnitude of threshold voltage shifts with read operation counts, (2) demonstrate how program/erase cycle count and retention age affect the read-disturb-induced error rate, and (3) identify that lowering pass-through voltage levels reduces the impact of read disturb and extend flash lifetime. Particularly, we find that the probability of read disturb errors increases with both higher wear-out and higher pass-through voltage levels. We leverage these findings to develop two new techniques. The first technique mitigates read disturb errors by dynamically tuning the pass-through voltage on a per-block basis. Using real workload traces, our evaluations show that this technique increases flash memory endurance by an average of 21%. The second technique recovers from previously-uncorrectable flash errors by identifying and probabilistically correcting cells susceptible to read disturb errors. Our evaluations show that this recovery technique reduces the raw bit error rate by 36%.

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A Drain Leakage Phenomenon in Poly Silicon Channel 3D NAND Flash Caused by Conductive Paths along Grain Boundaries

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors

Channel Modeling and Quantization Design for 3D NAND Flash Memory

Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization

A Novel Channel Preparation Scheme to Optimize Program Disturbance in Three-Dimensional NAND Flash Memory

Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability

A Novel Structure Between WL Spaces to Improve the Retention Characteristics in 3D NAND Flash

Read Disturb Errors in MLC NAND Flash Memory

Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET

Study of a Phenomenon of High Error WL in Mixed Read and Program Operations in 3-D NAND Flash

Impact Of Self-Heating Effect On The Retention Of 3-D Nand Flash Memory

Characterizing, Exploiting, and Mitigating Vulnerabilities in MLC NAND Flash Memory Programming

New Structure with SiO 2 -Gate-dielectric Select Gates in Vertical-Channel Three-Dimensional (3D) NAND Flash Memory

Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

Effects of crystallinity of silicon channels formed by two metal-induced lateral crystallization methods on the cell current distribution in NAND-type 3D flash memory

Optimizing Confined Nitride Trap Layers for Improved Z-Interference in 3D NAND Flash Memory

Exploiting Error Characteristic to Optimize Read Voltage for 3-D NAND Flash Memory

Analysis and Optimization of Temporary Read Errors in 3D NAND Flash Memories