Abstract:Random telegraph noise (RTN) adversely impacts circuit performance and this impact increases for smaller devices and lower operation voltage. To optimize the circuit design, many efforts have been made to model RTN. RTN is highly stochastic, with significant device-to-device variations (DDVs). Early works often characterize individual traps first and then group them together to extract their statistical distributions. This bottom-up approach suffers from limitations in the number of traps it is possible to measure, especially for the capture and emission time constants, calling the reliability of extracted distributions into question. Several compact models have been proposed, but their ability to predict long-term RTN is not verified. Many early works measured RTN only for tens of seconds, although a longer time window increases RTN by capturing slower traps. The aim of this work is to propose an integral methodology for modeling RTN and, for the first time, to verify its capability of predicting the long-term RTN. Instead of characterizing properties of individual traps/devices, the RTN of multiple devices was integrated to form one dataset for extracting their statistical properties. This allows using the concept of effective charged traps (ECTs) and transforms the need for time constant distribution to obtain the kinetics of ECT, making long-term RTN prediction similar to predicting aging. The proposed methodology opens the way for assessing RTN impact within a window of ten years by efficiently evaluating the probability of a device parameter at a given level.

Temporal Performance Degradation under RTN: Evaluation and Mitigation for Nanoscale Circuits

Evaluation and Mitigation of Performance Degradation under Random Telegraph Noise for Digital Circuits

An Integral Methodology for Predicting Long-Term RTN

Statistical analysis of random telegraph noise in digital circuits

Impacts of Random Telegraph Noise (RTN) on Digital Circuits

Too Noisy at the Bottom? —Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits

Evaluation of SRAM V-min Shift Induced by Random Telegraph Noise (RTN): Physical Understanding and Prediction Method

Deep Understanding of Random Telegraph Noise (RTN) Effects on SRAM Stability

Stochastic behavior of random telegraph noise in ferroelectric devices: Impact of downscaling and mitigation strategies for neuromorphic applications

Compact Modeling of Random Telegraph Noise in Nanoscale Mosfets and Impacts on Digital Circuits

New Observations on the AC Random Telegraph Noise (AC RTN) in Nano-Mosfets

New insights into AC RTN in scaled high-к / metal-gate MOSFETs under digital circuit operations

Too Noisy at the Nanoscale?-The Rise of Random Telegraph Noise (rtn) in Devices and Circuits

Impact of Temporal Transistor Variations on Circuit Reliability.

AC RTN: Testing, Modeling, and Prediction

RTN Impacts on RRAM-based Nonvolatile Logic Circuit

Large Random Telegraph Noise In Sub-Threshold Operation Of Nano-Scale Nmosfets

A Fast and Test-Proven Methodology of Assessing RTN/fluctuation on Deeply Scaled Nano Pmosfets.

Investigation on the Amplitude Coupling Effect of Random Telegraph Noise (RTN) in Nanoscale FinFETs

New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs

(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare