Too Noisy at the Nanoscale?-The Rise of Random Telegraph Noise (rtn) in Devices and Circuits

Runsheng Wang,Shaofeng Guo,Pengpeng Ren,Mulong Luo,Jibin Zou,Ru Hang

DOI: https://doi.org/10.1109/inec.2016.7589405

2016-01-01

Abstract:This paper gives an outline of our recent findings on the random telegraph noise (RTN) in nanoscale MOS devices and circuits.

What problem does this paper attempt to address?

Too Noisy at the Bottom? —Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits

Runsheng Wang,Shaofeng Guo,Zhe Zhang,Qingxue Wang,Dehuang Wu,Joddy Wang,Ru Huang

DOI: https://doi.org/10.1109/IEDM.2018.8614594

2018-01-01

Abstract:In this paper, the recent advances of our studies on RTN are presented from device, circuit, and EDA perspectives. RTN characteristics in FinFETs are investigated and compared with planar devices. The AC RTN effect is discussed for understanding RTN impacts in practical circuit applications. Then, a new and efficient circuit simulation platform for RTN is presented for the first time, which has been implemented in HSPICE using OMI/TMI. In addition, some open questions related to RTN are discussed with outlooks.
New Observations on the AC Random Telegraph Noise (AC RTN) in Nano-Mosfets

Runsheng Wang,Jibin Zou,Xiaoqing Xu,Changze Liu

DOI: https://doi.org/10.1109/vlsi-tsa.2012.6210146

2012-01-01

Abstract:The random telegraph noise (RTN) is becoming a critical issue for variability and reliability in nanoscale MOSFETs. Since devices actually operate under AC signals in digital circuits, it is essential to investigate the AC RTN at dynamic voltage, instead of traditional DC RTN at fixed gate bias. In this paper, the AC RTN in nano-MOSFETs is experimentally studied in detail, with the focus on the time domain. Various RTN parameters are investigated, in terms of frequency dependence and bias dependence, which are important for robust circuit design against RTN.
Randon nunber generator applied to sensor systen noise sinulation

Biao-ming XIE,Yi DING,Hai-bin SHEN

DOI: https://doi.org/10.13873/J.1000-9787(2014)08-0083-04

2014-01-01

Abstract:Traditional random number generator which used in voltage noise simulation is limited by operating voltage,and random sequence is not complicated enough. Aiming at these two problems,design corresponding circuit structure of random number,research characteristics of circuit cells under different operating voltages,solve timing issues caused by working voltage variation. By using non-linear feedback logic,improve complexity of random sequence.
(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

Eddy Simoen,Ben Kaczer,Maria Toledano-Luque,Cor Claeys

DOI: https://doi.org/10.1149/1.3615171

2011-09-15

ECS Transactions

Abstract:An overview is given on Random Telegraph Noise (RTN) in MOS-based devices. First, the basic properties and physics are briefly outlined, emphasizing the stochastic nature of its main parameters: the capture and emission time constant, while its amplitude is fixed and specific for each trap. Different techniques exist to characterize RTN in MOS devices, either by time or frequency domain measurements. A distinction can also be made between dynamic equilibrium methods like noise spectroscopy or transient measurements, based on a Deep-Level Transient Spectroscopy approach. While single-device based RTN measurements are still of high value, for modern circuit applications, techniques are being developed allowing a fast assessment of RTN in a large number of transistors. The scaling of CMOS technologies to the 32 nm and below raises the issue of variability induced either by random dopant fluctuations or in general, by random charge fluctuations, both spatially and in time. As will be seen, the presence of traps responsible for RTN brings about an additional source of variability which may become dominant in future memories. Finally, it will be shown that RTN is not only a fundamental component of 1/f noise but the same oxide traps are also largely responsible for the Bias Temperature Instability (BTI) in scaled MOSFETs. This leads to a self-consistent model for BTI and a stochastic approach towards the reliability prediction of deep submicron CMOS technologies.
Investigation on the Amplitude Distribution of Random Telegraph Noise (rtn) in Nanoscale Mos Devices

Zexuan Zhang,Shaofeng Guo,Xiaobo Jiang,Runsheng Wang,Ru Huang,Jibin Zou

DOI: https://doi.org/10.1109/inec.2016.7589332

2016-01-01

Abstract:In this paper, the amplitude (ΔI d /I d ) distribution of random telegraph noise (RTN) induced by each trap in nanoscale devices is investigated based on the statistical experimental results. The RTN states are extracted through the proposed Gaussian mixture model (GMM). Mont-Carlo simulation is performed to extract the most probable results for mean trap number and each RTN amplitude. The results show that the RTN amplitude distribution is well consistent with the lognormal distribution instead of the exponential distribution for both the DC and AC results, which is helpful for future robust digital circuit design against RTN.
Large Random Telegraph Noise In Sub-Threshold Operation Of Nano-Scale Nmosfets

J. P. Campbell,L. C. Yu,K. P. Cheung,J. Qin,J. S. Suehle,A. Oates,K. Sheng

DOI: https://doi.org/10.1109/ICICDT.2009.5166255

2009-01-01

Abstract:We utilize low-frequency noise measurements to examine the sub-threshold voltage (sub-V-TH) operation of highly scaled devices. We rind that the sub-V-TH low-frequency noise is dominated by random telegraph noise (RTN). The RTN is exacerbated both by channel dimension scaling and reducing the gate overdrive into the sub-V-TH regime. These large RTN fluctuations greatly impact circuit variability and represent a troubling obstacle that must be solved if sub-V-TH operation is to become a viable solution for low-power applications.
New Insights into the Amplitude of Random Telegraph Noise in Nanoscale MOS Devices

Zexuan Zhang,Shaofeng Guo,Xiaobo Jiang,Runsheng Wang,Zhe Zhang,Peng Hao,Yangyuan Wang,Ru Huang

DOI: https://doi.org/10.1109/IRPS.2017.7936288

2017-01-01

Abstract:Amplitude distribution of random telegraph noise (RTN) in nanoscale CMOS technology is an open question, with both lognormal and exponential distributions widely reported in literatures. In this paper, we experimentally clarified the underlying reasons for the first time, and revealed that the trap coupling effect is the missing role behind the divergent measured results of RTN amplitude statistics. Based on the proposed new method, “clean” RTN data with and without coupling are successfully characterized. It is found that, with increasing of the coupling strength, the apparent distribution changes from exponential-like to lognormal-like; while the exact form is actually the two-stage lognormal distribution, originating from two categories of traps (located above the channel percolation paths or not). The results are essential for understanding of oxide trap coupling and modeling of RTN and are thus helpful for resilient circuit design against RTN in the future.
On the AC Random Telegraph Noise (RTN) in MOS Devices: an Improved Multi-Phonon Based Model

Nanbo Gong,Runsheng Wang,Changze Liu,Jibin Zou,Ru Huang

DOI: https://doi.org/10.1109/icsict.2012.6467653

2012-01-01

Abstract:As devices scaling down into nanometer region, the random telegraph noise (RTN) has become a significant issue for device variability and reliability, which has been extensively studied at DC conditions and recently also at AC conditions. The nonradiative multiphonon (NMP) theory has been introduced to describe the statistical characteristics of DC RTN, however, basic NMP model cannot explain the frequency dependence of AC RTN statistics. In this paper, by analyzing detailed trapping/detrapping behavior of oxide defects, it is found that there exist metastable states due to the polarization effect of localized defect. An improved NMP model is proposed for the first time, which agrees well with experiments. The results are helpful for deep understanding of AC RTN in nanoscaled devices and the future circuit design against RTN.
Compact Modeling of Random Telegraph Noise in Nanoscale Mosfets and Impacts on Digital Circuits

Mulong Luo,Runsheng Wang,Jing Wang,Shaofeng Guo,Jibin Zou,Ru Huang

DOI: https://doi.org/10.1109/vlsi-tsa.2014.6839681

2014-01-01

Abstract:The complexity of Random Telegraph Noise (RTN) under digital circuit operations makes it difficult to predict its impacts without accurate modeling and simulation. However, properly integrating RTN into circuit simulation is challenging due to its stochastic nature. In this paper, RTN is comprehensively modeled and embedded into BSIM. A circuit simulation methodology based on industry-standard EDA tools is proposed, resolving the stochastic property, the AC effects, and the coupling of RTN and circuits that are crucial for accurate predictions of impacts of RTN. Using the compact model and proposed method, impacts of RTN on RO and SRAM are demonstrated, which ascertains their applicability to different type of circuits.
Temporal Performance Degradation under RTN: Evaluation and Mitigation for Nanoscale Circuits

Hong Luo,Yu Wang,Yu Cao,Yuan Xie,Yuchun Ma,Huazhong Yang

DOI: https://doi.org/10.1109/ISVLSI.2012.35

2012-01-01

Abstract:Random telegraph noise (RTN) is one of the critical reliability concerns in nanoscale circuit design, and it is important to consider the impact of RTN on the circuits' temporal performance. This paper proposes a framework to evaluate the RTN-induced performance degradation and variation of digital circuits, and the evaluation results show that RTN can result in 54.4% degradation and 59.9% variation on the circuit delay at 16nm technology node. Power supply tuning and gate sizing techniques are investigated to demonstrate the impact of such circuit-level techniques on mitigating the RTN effect.
Impacts of Random Telegraph Noise (RTN) on Digital Circuits

Mulong Luo,Runsheng Wang,Shaofeng Guo,Jing Wang,Jibin Zou,Ru Huang

DOI: https://doi.org/10.1109/ted.2014.2368191

IF: 3.1

2015-01-01

IEEE Transactions on Electron Devices

Abstract:Random telegraph noise (RTN) is one of the important dynamic variation sources in ultrascaled MOSFETs. In this paper, the recently focused ac trap effects of RTN in digital circuits and their impacts on circuit performance are systematically investigated. Instead of trap occupancy probability under dc bias condition (p(dc)), which is traditionally used for RTN characterization, ac trap occupancy probability (p(ac)), i.e., the effective percentage of time trap being occupied under ac bias condition, is proposed and evaluated analytically to investigate the dynamic trapping/detrapping behavior of RTN. A simulation approach that fully integrates the dynamic properties of ac trap effects is presented for accurate simulation of RTN in digital circuits. The impacts of RTN on digital circuit performances, e.g., failure probabilities of SRAM cells and jitters of ring oscillators, are then evaluated by the simulations and verified against predictions based on p(ac). The results show that degradations are highly workload dependent and that p(ac) is critical in accurately evaluating the RTN-induced performance degradation and variability. The results are helpful for robust and resilient circuit design.
The Origins of Random Telegraph Noise in Highly Scaled SiON Nmosfets

J. P. Campbell,Jin Qin,K. P. Cheungl,Libing Yu,J. S. Suehlel,A. S. Oates,Kuang Sheng

DOI: https://doi.org/10.1109/irws.2008.4796097

2008-01-01

Abstract:Random telegraph noise (RTN) has recently become an important issue in advanced circuit performance. It has also recently been used as a tool for gate dielectric defect profiling. In this work, we show that the widely accepted model thought to govern RTN behavior cannot be used to describe our experimental observations. The basis of this model (charge exchange between inversion layer and bulk oxide defects via tunneling) is inconsistent with our RTN observations on advanced SiON nMOSFETs with 1.4 nm physical gate oxide thickness. Alternatively, we show that RTN is qualitatively consistent with the capture and emission of inversion charge by interface states. Our results suggest that a large body of the low-frequency noise literature very likely needs to be re-interpreted.
Deep Understanding of Random Telegraph Noise (RTN) Effects on SRAM Stability

Dongyuan Mao,Shaofeng Guo,Runsheng Wang,Mulong Luo,Ru Huang

DOI: https://doi.org/10.1109/vlsi-tsa.2016.7480513

2016-01-01

Abstract:In this paper, multi-phonon transition model of RTN in FinFETs with statistical distribution is integrated into industry-standard BSIM-CMG, and read stability of SRAM is thoroughly examined. Different tendencies of SRAM failure probability plateau caused by RTN are found, which reflect real circuit operation situations. The impacts of RTN amplitude, bitline capacity, operation frequency on Vmin are investigated in detail. Statistical results with impacts of RTN and process variations are also presented, which can be helpful for stability design and guard band prediction for SRAM.
Evaluation and Mitigation of Performance Degradation under Random Telegraph Noise for Digital Circuits

Xiaoming Chen,Hong Luo,Yu Wang,Yu Cao,Yuan Xie,Yuchun Ma,Huazhong Yang

DOI: https://doi.org/10.1049/iet-cds.2012.0361

2013-01-01

Abstract:Random telegraph noise (RTN) has become an important reliability issue in nanoscale circuits recently. This study proposes a simulation framework to evaluate the temporal performance of digital circuits under the impact of RTN at 16 nm technology node. Two fast algorithms with linear time complexity are proposed: statistical critical path analysis and normal distribution-based analysis. The simulation results reveal that the circuit delay degradation and variation induced by RTN are both >20% and the maximum degradation and variation can be >30%. The effect of power supply tuning and gate sizing techniques on mitigating RTN is also investigated.
Investigation on the Amplitude Coupling Effect of Random Telegraph Noise (RTN) in Nanoscale FinFETs

Shaofeng Guo,Zhenghan Lin,Runsheng Wang,Zexuan Zhang,Zhe Zhang,Yangyuan Wang,Ru Huang

DOI: https://doi.org/10.1109/IRPS.2018.8353701

2018-01-01

Abstract:In this paper, based on the complex random telegraph noise (RTN) data in FinFETs, the impacts of the trap coupling effect on RTN amplitude are studied statistically. The coupling effect is found to be enhanced by the double-side coupling mechanism in FinFETs. The non-monotonic VG dependence of amplitude coupling strength is observed for the first time, which is contributed by the evolution of channel percolation paths. In addition, the impacts of HCI and NBTI stresses on the coupling strength are studied. Based on the new understandings on coupling effect in FinFETs, the impacts of amplitude coupling on typical digital circuits are also investigated. The results are helpful for comprehensive understanding of the RTN coupling mechanism in nanoscale FinFET technology and RTN-aware circuit design.
Understanding Generated RTN As an Entropy Source for True Random Number Generators

Zhigang Ji,Jianfu Zhang

DOI: https://doi.org/10.1109/icicdt51558.2021.9626499

2021-01-01

Abstract:Future secure communication relies on the true Random number Generator (TRNG), of which the random source is of most importance for offering high entropy. The random telegraph noise (RTN) in nano-scaled devices show excellent randomness, however, RTN-based TRNG suffer from relatively large area and low speed. Here we introduce our recently-proposed solutions to tackle these two issues. Then we performed systematic analysis based on Monte Carlo simulation to understand the impact of design parameters on its practical performance, shedding light on the practical circuit design.
Stochastic behavior of random telegraph noise in ferroelectric devices: Impact of downscaling and mitigation strategies for neuromorphic applications

Ryun-Han Koo,Wonjun Shin,Sung-Tae Lee,Daewoong Kwon,Jong-Ho Lee

DOI: https://doi.org/10.1016/j.chaos.2024.115856

2024-12-06

Abstract:This study investigates the stochastic behavior of random telegraph noise (RTN) in ferroelectric tunnel junctions (FTJs) considering the downscaling effect and its implications for neuromorphic systems. Through low-frequency noise spectroscopy and DC current fluctuation measurements of fabricated FTJs with varying top electrode areas, we quantified the stochasticity of the tunneling current as a function of applied voltage and device area. Our results indicate a significant increase in RTN-related stochasticity with decreasing FTJ area, resulting in higher RTN amplitude and a greater number of devices exhibiting RTN. Analysis of the capture and emission time constants of RTN shows that RTN arises from the interaction between the metal top electrode and a dominant trap site, located 4 nm deep from the top electrode, with a trap energy 1.8 eV below the conduction band of the HZO layer. To assess the impact on neuromorphic systems, we performed system-level simulations incorporating the measured device non-idealities (nonlinearity, limited dynamic range) and stochasticity (1/ f noise and RTN), and demonstrated that RTN can severely degrade system accuracy as device size decreases. To mitigate this problem, we proposed a limited dynamic range scheme that confines device operation to RTN-safe conductance levels, effectively minimizing accuracy degradation. This study clarifies the origin of the stochastic behavior of RTN in FTJs and also provides system-level solutions for high-density neuromorphic hardware systems affected by RTN.

mathematics, interdisciplinary applications,physics, mathematical, multidisciplinary
Statistical analysis of random telegraph noise in digital circuits

Xiaoming Chen,Yu Wang,Yu Cao,Huazhong Yang

DOI: https://doi.org/10.1109/ASPDAC.2014.6742883

2014-01-01

Abstract:Random telegraph noise (RTN) has become an important reliability issue at the sub-65nm technology node. Existing RTN simulation approaches mainly focus on single trap induced RTN and transient response of RTN, which are usually time-consuming for circuit-level simulation. This paper proposes a statistical algorithm to study multiple traps induced RTN in digital circuits, to show the temporal distribution of circuit delay under RTN. Based on the simulation results we show how to protect circuit from RTN. Bias dependence of RTN is also discussed.
New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs

Cheng Chen,Qianqian Huang,Jiadi Zhu,Yang Zhao,Lingyi Guo,Ru Huang

DOI: https://doi.org/10.1109/ted.2017.2712714

IF: 3.1

2017-01-01

IEEE Transactions on Electron Devices

Abstract:As one of the important sources of lowfrequency noise, random telegraph noise (RTN) in tunnel FET (TFET) has attracted growing attention recently. However, there is still lack of explanation for the high-amplitude RTN, which may cause serious variability and reliability problems to TFET-based ultralow-power circuits. In this paper, we experimentally investigate the RTN amplitude characteristics in TFETs, revealing the mechanism of highamplitude RTN. It is found that the nonuniform distribution of band-to-band tunneling (BTBT) generation rate along device width direction is responsible for the high-amplitude RTN. Locations with relatively higher BTBT generation rate may act as critical paths dominating the device current. "Lucky" trap located at a critical path can induce the high-amplitude RTN. With device width shrinking, the number of critical paths may be reduced, resulting in much higher maximum RTN amplitude. In addition, the impacts of process parameters on RTN amplitude are discussed. Both higher source doping concentration (NS) and higher thermal budget can effectivelymitigate the nonuniformity of BTBT generation rate along device width direction, causing suppressed RTN amplitudes. Considering that the higher thermal budget may lead to degraded device performance, the annealing process should compromisingly be designed in terms of both variation and device performance.
New understanding of the statistics of random telegraph noise in Si nanowire transistors - the role of quantum confinement and non-stationary effects

Changze Liu,Runsheng Wang,Jibin Zou,Ru Huang,Chunhui Fan,Lijie Zhang,Jiewen Fan,Yujie Ai,Yangyuan Wang

DOI: https://doi.org/10.1109/IEDM.2011.6131599

2011-01-01

Abstract:In this paper, the random telegraph noise (RTN) statistics in silicon nanowire transistors (SNWTs) are comprehensively studied. The capture/emission time constants and probabilities are found to be strongly impacted by the quantum confinement in SNWTs, which cannot be fully explained by classical RTN theory. A full quantum RTN model for SNWTs is proposed for fundamental understanding of the experiments. The characteristics of non-stationary RTN in SNWTs under high-field biases are studied for the first time, based on the developed statistical trap-response (STR) characterization method. The trap capture probability is found to be much different from that of the quasi-stationary RTN, leading to large errors in circuit aging prediction if using traditional RTN distributions. These new understandings are critical for robust SNWT circuit design against RTN.

Too Noisy at the Nanoscale?-The Rise of Random Telegraph Noise (rtn) in Devices and Circuits

Too Noisy at the Bottom? —Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits

New Observations on the AC Random Telegraph Noise (AC RTN) in Nano-Mosfets

Randon nunber generator applied to sensor systen noise sinulation

(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

Investigation on the Amplitude Distribution of Random Telegraph Noise (rtn) in Nanoscale Mos Devices

Large Random Telegraph Noise In Sub-Threshold Operation Of Nano-Scale Nmosfets

New Insights into the Amplitude of Random Telegraph Noise in Nanoscale MOS Devices

On the AC Random Telegraph Noise (RTN) in MOS Devices: an Improved Multi-Phonon Based Model

Compact Modeling of Random Telegraph Noise in Nanoscale Mosfets and Impacts on Digital Circuits

Temporal Performance Degradation under RTN: Evaluation and Mitigation for Nanoscale Circuits

Impacts of Random Telegraph Noise (RTN) on Digital Circuits

The Origins of Random Telegraph Noise in Highly Scaled SiON Nmosfets

Deep Understanding of Random Telegraph Noise (RTN) Effects on SRAM Stability

Evaluation and Mitigation of Performance Degradation under Random Telegraph Noise for Digital Circuits

Investigation on the Amplitude Coupling Effect of Random Telegraph Noise (RTN) in Nanoscale FinFETs

Understanding Generated RTN As an Entropy Source for True Random Number Generators

Stochastic behavior of random telegraph noise in ferroelectric devices: Impact of downscaling and mitigation strategies for neuromorphic applications

Statistical analysis of random telegraph noise in digital circuits

New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs

New understanding of the statistics of random telegraph noise in Si nanowire transistors - the role of quantum confinement and non-stationary effects