Abstract:In this paper, we propose an optimized device structure with a highly stable process that addresses threshold voltage shift issues in the String-Select-Line (SSL) and Ground-Select-Line (GSL) gates using ferroelectric memory in 3D NAND flash memory applications. The proposed device utilizes nickel (Ni) instead of tungsten (W) for the GSL and SSL gates, enabling optimized polarization properties during the annealing process and leveraging the disparity in thermal expansion coefficients. Notably, the difference in thermal expansion coefficient from tungsten (W), employed in other Word Line (WL) gates, allows effective control over polarization properties. To validate the proposed structure, we fabricated and measured a Metal–Ferroelectric–Insulator–Silicon (MFIS) capacitor utilizing Hafnium–Zirconium Oxide (HZO) material. The measurement results indicate that a change in the upper metal layer results in a more than fivefold increase in the variance of polarization characteristics between the WL gates (responsible for the memory function) and the SSL and GSL gates dedicated to channel control. In addition, process simulation was conducted using the same device structure, confirming the application of tensile stress to the HZO thin film in the case of a W electrode and compressive stress in the case of a Ni electrode. Furthermore, applying this controlled polarization characteristic parameter to the 3D NAND flash memory structure revealed a reduction in the threshold voltage shift of the control gate from a previous change of 2.6 V or more to 0.05 V, facilitating stable control.

A Novel Structure for Beyond-45 Nm nor Flash Technology Featuring Short Channel Effect Immunity and Low Random Telegraph Signal Noise

3-D Channel Structure Flash Having Short Channel Effect Immunity and Low Random Telegraph Signal Noise

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

A Novel Body-Tied Fin Field Effect Transistor Flash Memory Structure with Λ-Shaped Floating Gate for Sub 45 Nm NOR Flash Memory

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors (adv. Electron. Mater. 12/2022)

A Novel Non-Planar Cell Structure for Flash Memory

Novel Vertical Channel Double Gate Structures for High Density and Low Power Flash Memory Applications.

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

A Novel Structure Between WL Spaces to Improve the Retention Characteristics in 3D NAND Flash

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

A novel flash memory cell and design optimization for high density and low power application

A Novel 3D NOR Flash with Single-Crystal Silicon Channel: Devices, Integration, and Architecture

A Novel High-Density Source-Side-Injection Flash Memory Cell with Vertical Channel

Fabrication and optimization of aggressively scaled Dual-Bit/Cell Split-Gate Floating-Gate flash memory cell in 55-nm node technology

An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications

A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

A Novel High Programming Efficiency and Highly Scalable Flash Memory Cell Based on Tunneling Fet (Tfet)

Simulation of Charge Trapping Memory with Novel Structures

Optimizing Confined Nitride Trap Layers for Improved Z-Interference in 3D NAND Flash Memory

A Novel High-Density and Low-Power Ternary Content Addressable Memory Design Based on 3D NAND Flash