Abstract:As of today, highly germanium doped Czochralski silicon crystals are used in applications. However, it is not clear how a germanium content in the range of 10(18) atoms/cm(3) influences the oxygen precipitation behavior, which is highly relevant for the gettering potential of the wafer. In this context, high energy X-ray diffraction is a promising tool to monitor real-time the strain introduced by the oxygen agglomeration and growth. Nevertheless, in particular, in the dynamical limit of X-ray diffraction and at elevated temperatures, the strain originating from the precipitation process has to be clearly distinguished from the intensity contribution of thermal vibrations. In Laue geometry, dynamical effects can even lead to an increment of the integrated intensity with temperature completely unexpected in the kinematical limit, where temperature is tackled solely by a Debye-Waller factor. In the following, an approach is presented allowing us to completely correct the influence of thermal vibrations in the dynamical limit. This approach is applied to undoped and highly germanium doped silicon crystals, clearly revealing an enhanced inventory of grown-in precipitates with germanium doping and suggesting a morphological transformation towards a phase of higher strain of the grown-in precipitates in the range between room temperature and 800 degrees C. Published by AIP Publishing.

Model Study of the Local Vibration Center Related to El2 Levels in Gaas

Pair of Local Vibration Mode Absorption-Bands Related to El2 Defects in Semiinsulating Gaas

Relation Between the Metastability of EL2 and the Photosensitivity of Local Vibrational Modes in Semi-Insulating GaAs.

Study of Local Vibrational Mode Absorptions of a Defect Related to EL2 in SI-GaAs

Anomalous Intensities of Local Mode Vibrational Absorption of Germane and A New Theoretical Explanation

Verification Ofel2 Electronic Absorption Effect on Charge Transfer in Semi-Insulating GaAs

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Coupled Brillouin-Raman Study of Direct and Folded Acoustic Modes in Gaas-Alas Superlattices

Effects of Nonlocal Interactions in Describing V Centers of MgO

Two Local Vibrational Modes Related to Hydrogen in GaN

Infrared-Absorption Due To 2-Dimensional-Electron-Gas Collective Excitation In Gaas/Alxga1-Xas Multiple-Quantum-Well Structures

An Improved Dipole Moment Model for the Intensities of the Vibrational Absorption of Xy4 Near the Local Mode Limit

Phonon Modes And Raman-Scattering In Gaas/Ga1-Xalxas

Raman‐scattering Probe of Anharmonic Effects Due to Temperature and Composition in InGaN

Long-wavelength Optic Vibrations in a Superlattice.

A Genetic Algorithm Research on Lorentz Oscillator Model in Infrared Spectra of Gamnn

LATTICE VIBRATION OF INTEGRATED SEMICONDUCTOR AND FERROELECTRICS

Local Vibration at the Surface of a Ge Nanocrystal Embedded in a Silicon Oxide Matrix

Vibrational properties of Si/Ge superlattices

Physical Model of the Infrared Dielectric Function of Zinc Sulfide