Abstract:Metastable states created by electron or hole capture in crystal defects are widely used in dosimetry and photonic applications. Feldspar, the most abundant mineral in the Earth crust (>50%), generates metastable states with lifetimes of millions of years upon exposure to ionizing radiation. Although feldspar is widely used in dosimetry and geochronometry, the creation of metastable states and charge transfer across them is poorly understood. Understanding such phenomena requires next-generation methods based on high-resolution, site-selective probing of the metastable states. Recent studies using site-selective techniques such as photoluminescence (PL), and radioluminescence (RL) at 7 K have revealed that feldspar exhibits two near-infrared (NIR) emission bands peaking at 880 nm and 955 nm, which are believed to arise from the principal electron-trapping states. Here, we map for the first time the electron-trapping states in potassium-rich feldspar using spectrally-resolved cathodoluminescence microscopy at a spatial resolution of around 6 to 22 micrometer. Each pixel probed by a scanning electron microscope provides us a cathodoluminescence spectrum (SEM-CL) in the range 600-1000 nm, and elemental data from energy-dispersive x-ray (EDX) spectroscopy. We conclude that the two NIR emissions are spatially variable and, therefore, originate from different sites. This conclusion contradicts the existing model that the two emissions arise from two different excited states of a principal trap. Moreover, we are able to link the individual NIR emission peaks with the geochemical variations (K, Na and Fe concentration), and propose a cluster model that explains the quenching of the NIR emission by Fe4+.

Relation Between the Metastability of EL2 and the Photosensitivity of Local Vibrational Modes in Semi-Insulating GaAs.

Verification Ofel2 Electronic Absorption Effect on Charge Transfer in Semi-Insulating GaAs

Pair of Local Vibration Mode Absorption-Bands Related to El2 Defects in Semiinsulating Gaas

Model Study of the Local Vibration Center Related to El2 Levels in Gaas

Study of Local Vibrational Mode Absorptions of a Defect Related to EL2 in SI-GaAs

Spatially-indirect Photo- and Electro-Luminescence in the 1.3 /spl Mu/m Range at Room Temperature

Transition of Radiative Recombination Channels from Delocalized States to Localized States in A Gainp Alloy with Partial Atomic Ordering: A Direct Optical Signature of Mott Transition?

EL2 Deep Level Defects and Above-Band Gap Two-Photon Absorption in High Gain Lateral Semi-Insulating GaAs Photoconductive Switch

Investigation of Defect Levels in Cs2hg6s7 Single Crystals by Photoconductivity and Photoluminescence Spectroscopies

Optical Absorption and Photo‐Luminescence Spectra of Molecular Van Der Waals Systems: Frenkel Exciton Resonance Effects

Observation of El2 and Additional Deep Levels at Low Temperature in an Algaas/Gaas Multiple-Quantum-Well Structure

Excitons in Atomically Thin TMD in Electric and Magnetic Fields

Optical Study of Localized and Delocalized States in Gaasn/Gaas

Influence of EL2 Deep Level on Photoconduction of Semi-Insulating GaAs under Ultrashort Pulse Photoinjection

Mechanism for Long Photocurrent Time Constants in α-Ga2O3 UV Photodetectors

Thermal Redistribution of Localized Excitons and Its Effect on the Luminescence Band in InGaN Ternary Alloys

Transmission coefficient and probability of intersubband transitions in GaAs/AlGaAs superlattices: Effect of non-parabolicity

Two-Photon-Absorption-Induced Nonlinear Photoresponse In Gaas/Algaas Quantum-Well Infrared Photodetectors

Site-selective mapping of metastable states using electron-beam induced luminescence microscopy

Angle-Dependent Photoinduced Changes of Near-Infrared Transmission in Amorphous Selenium Films

The Sub-bandgap Photoconductivity in InGaAs:ErAs Nanocomposites