Abstract:The heavy element semiconductor compound Cs2Hg6S7 is of interest as a potential wide gap semiconductor for gamma ray detection. To determine electrically active defects and their energy levels, photoconductivity (PC) spectroscopy was carried out over the temperature range of 90-295 K. The low temperature spectrum exhibits photoconductive transitions at 1.495, 1.61, 1.66, and 1.68 eV. The optical transitions are tentatively attributed to defects with levels located at energies of 50, 70, 120, and 240 meV from the band edge. A superlinear dependence of photocurrent on illumination intensity is observed that is attributed to a two-center recombination process that involves shallow traps and recombination centers. Near band edge photoluminescence (PL) was observed over the temperature range of 24–80 K. The spectrum revealed three defect related emission bands located at 1.68, 1.66, and 1.62 eV, whose ionization energies are 57 meV, 78 meV, and 115 meV, respectively. From the temperature and excitation dependencies of the observed peak intensities and energies, the radiative recombination mechanisms of the bands were attributed to transitions involving excitons bound to neutral and ionized acceptors. Good agreement of the defect level energies determined by PL and PC were noted, indicating that they were of the same origin. The defects were tentatively attributed to metal vacancies that form shallow acceptor levels.

Pair of Local Vibration Mode Absorption-Bands Related to El2 Defects in Semiinsulating Gaas

Study of Local Vibrational Mode Absorptions of a Defect Related to EL2 in SI-GaAs

Model Study of the Local Vibration Center Related to El2 Levels in Gaas

Relation Between the Metastability of EL2 and the Photosensitivity of Local Vibrational Modes in Semi-Insulating GaAs.

Verification Ofel2 Electronic Absorption Effect on Charge Transfer in Semi-Insulating GaAs

Two Local Vibrational Modes Related to Hydrogen in GaN

Defect Dynamics and Spectral Observation of Twinning in Single Crystalline Laalo3 under Subbandgap Excitation

The Structural Origin of the 15 Μm Residual Absorption in the BaGa4Se7 Crystal

Emission from Defects in Thin Gan Epilayers Grown on Vicinal 4H-Sic Substrates

EL2 Deep Level Defects and Above-Band Gap Two-Photon Absorption in High Gain Lateral Semi-Insulating GaAs Photoconductive Switch

Investigation of Defect Levels in Cs2hg6s7 Single Crystals by Photoconductivity and Photoluminescence Spectroscopies

Anti-weak Localization of the Two Dimensional Electron Gas in Modulation-Doped Al/sub X/ga/sub 1-X/n/gan Single Quantum Well

The Wannier-Mott Exciton, Bound Exciton, and Optical Phonon Replicas of Single-Crystal GaSe

Infrared-Absorption Due To 2-Dimensional-Electron-Gas Collective Excitation In Gaas/Alxga1-Xas Multiple-Quantum-Well Structures

Low-temperature irradiation-induced defects in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type germanium

Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC

Observation of El2 and Additional Deep Levels at Low Temperature in an Algaas/Gaas Multiple-Quantum-Well Structure

Weak Anti-Localization of the Two-Dimensional Electron Gas in Modulation-Doped AlxGa1−xN∕GaN Heterostructures with Two Subbands Occupation

VEELS Band Gap Measurements Using Monochromated Electrons

Temperature-Dependent Raman Scattering of Phonon Modes and Defect Modes in GaN and p-Type GaN Films

Low-Temperature Irradiation-Induced Defects in P-Type Germanium