Study of Local Vibrational Mode Absorptions of a Defect Related to EL2 in SI-GaAs

CY SONG,WK GE,DH JIANG,CC XU

DOI: https://doi.org/10.1016/0022-2313(88)90234-7

IF: 3.6

1988-01-01

Journal of Luminescence

Abstract:A pair of local vibrational mode infrared absorption bands were found in SI-GaAs materials and proved to be associated to the ground state and the metastable state of EL2 centers in SI-GaAs.

What problem does this paper attempt to address?

Pair of Local Vibration Mode Absorption-Bands Related to El2 Defects in Semiinsulating Gaas

CY SONG,WK GE,DH JIANG,CC HSU

DOI: https://doi.org/10.1063/1.97762

IF: 4

1987-01-01

Applied Physics Letters

Abstract:A pair of correlated bands, which show the same fine structure at low temperature, is discovered in infrared absorption spectra of semi-insulating GaAs crystals. At 80 K the bands peak at 730 cm−1 and 714 cm−1, respectively. According to the fine structures, the spectral linewidths, and the temperature dependence of frequency shifts, the two absorption bands are identified to be induced by local vibration modes of the same defect. As the interconversion of the two bands under some conditions of illumination and temperature variation is very similar to the transformation between the ground state and the metastable state of the EL2 level, these absorptions are ascribed to be related to the EL2 defect.
Model Study of the Local Vibration Center Related to El2 Levels in Gaas

XF ZHONG,DS JIANG,WK GE,CY SONG

DOI: https://doi.org/10.1063/1.99386

IF: 4

1988-01-01

Applied Physics Letters

Abstract:A tentative explanation is given for a recently reported local vibrational mode induced infrared absorption which is related to EL2 centers in GaAs. Interstitial (or off-center substitutional) oxygen is suggested to be responsible for these vibration modes. Taking lattice relaxation into account, a simple model based on the two-center bond theory is proposed and evaluated. The adequacy of this model strongly implies a relationship of EL2 centers in the measured samples with oxygen.
Relation Between the Metastability of EL2 and the Photosensitivity of Local Vibrational Modes in Semi-Insulating GaAs.

CY SONG,B PAJOT,WK GE,DS JIANG

DOI: https://doi.org/10.1103/physrevb.52.4864

1995-01-01

Abstract:Recent infrared spectroscpic observations of local vibrational mode absorptions have revealed a number of photosensitive centers in semi-insulating GaAs. They include (OVAs) center which has three modes at 730 cm(-1) (A), 715 cm(-1) (B), and 714 cm(-1) (C), respectively, a suggested NH center related to a line at 983 cm(-1) (X(1)), and centers related to hydrogen, such as (H-O) or (H-N) bonds, corresponding to a group of peaks in the region of 2900-3500 cm(-1). The photosensitivity of various local vibration centers was observed to have similar time dependence under near-infrared illumination and was suggested to be due to their charge-state interconversion. Mainly described in this work is the effect of the 1.25-eV illumination. It is confirmed that this photoinduced kinetic process results from both electron capture and hole capture, which are closely related to the photoionization behavior and metastability of the EL2 center.
Verification Ofel2 Electronic Absorption Effect on Charge Transfer in Semi-Insulating GaAs

WK Ge,CY Song,DS Jiang

DOI: https://doi.org/10.1103/physrevb.53.9809

1996-01-01

Abstract:The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole photoionizations, and the transition from its ground state to metastable state, respectively. Under an illumination with a selected photon energy in the near infrared region, these three processes with different optical cross sections will show different kinetics against the illumination time. It has recently been shown that the photosensitivity (measured under 1.25 eV illumination) of the local vibrational mode absorption induced by some deep defect centers in SI-GaAs is a consequence of the electron and hole photoionizations of EL2. This paper directly measures the kinetics of the electronic transition associated with EL2 under 1.25 eV illumination, which implies the expected charge transfer among different charge states of the EL2 center. A calculation based on a simple rate equation model is in good agreement with the experimental results.
Light Scattering by Superlattice Acoustic Modes at Critical Points of the Brillouin Zone

J. He,J. Sapriel,R. Azoulay,G. Le Roux,H. Brugger

DOI: https://doi.org/10.1117/12.947315

1988-01-01

Abstract:A combined Brillouin-Raman study has been performed in Si-Si1-xGex and GaAs-Al As superlattices. The photoelastic constant of Si0.5Ge0.5 with respect to Si for several light wavelengths is measured for the first time by light scattering experiments. The frequencies, linewidths and relative intensities of the superlattice acoustic phonon modes are carefully investigated, especially for scattering wavevectors in the vicinity of Brillouin zone boundaries. The acoustic and optical absorptions are found to have particular effects on the frequencies and relative intensities for scattering wavevectors in these regions.
Coupled Brillouin-Raman Study of Direct and Folded Acoustic Modes in Gaas-Alas Superlattices

J SAPRIEL,J HE,B DJAFARIROUHANI,R AZOULAY,F MOLLOT

DOI: https://doi.org/10.1103/physrevb.37.4099

1988-01-01

Abstract:Acoustic and acousto-optic properties are investigated in GaAs-AlAs superlattices of period D ranging between 40 and 500 A\r{}. An experimental setup where a Fabry-Perot interferometer is used in tandem with the Raman spectrometer allowed frequency-shift measurements as low as 1 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$. The dispersion branches of (direct) LA and TA, as well as folded-LA and -TA, modes are obtained for excitation wave vectors q less than the limit \ensuremath{\pi}/D of the first Brillouin zone, and in the range \ensuremath{\pi}/D to 2\ensuremath{\pi}/D (second Brillouin zone). The intensities of all these modes are very sensitive to the reduced excitation wave vector Q=qD/\ensuremath{\pi}. Many striking effects are pointed out for the first time: The existence of folded acoustic branches which are observed at frequencies below the direct acoustic branch for Q>1, and the ``anomalous'' intensity behavior, certain modes becoming even more intense than the Brillouin line for Q approaching the Brillouin-zone limit Q=1. Determination of the relative value p of the Pockels photoelastic coefficient ${p}_{13}$ in AlAs with respect to GaAs is also reported. p is observed to undergo a noticeable variation versus the photon energy between 6764 and 4579 A\r{}.
EL2 Deep Level Defects and Above-Band Gap Two-Photon Absorption in High Gain Lateral Semi-Insulating GaAs Photoconductive Switch

W Shi,W Wang,HJ Niu,XB Zhang,WL Ji

DOI: https://doi.org/10.1117/12.577819

2005-01-01

Abstract:Experiments of a lateral semi-insulating GaAs photoconductive switch, both linear and nonlinear mode of the switch were observed when the switch was triggered by 1064 nm laser pulses, with energy of 1.9 mJ and the pulse width of 60 ns, and operated at biased electric field of 4.37 kV/cm. It's wavelength is longer than 876nm, But the experiments indicate that the semi-insulating GaAs photoconductive switches can absorb 1064 mm laser obviously, which is out of the absorption range of the GaAs material. It is not possible to explain this behavior by using intrinsic absorption mechanism. We think that there are two mostly kinds of absorption mechanisms play a key part in absorption process, they are the two-steps-single-photon absorption that based on the EL2 energy level and two-photon absorption.
Investigation of EL2 defect in 10MeV electron irradiated undoped semi-insulating LEC GaAs

FengMei Wu,Yi Shi,Wuming Chen,Hongwei Wu,Qiji Lai,Zhouying Zhao

IF: 6.318

1995-01-01

Rare Metals

Abstract:The induced defects and especially the EL2 defect in 10 MeV electron irradiated undoped semi-insulating (SI) LEC GaAs samples were investigated by using optical transient current spectroscopy (OTCS) technique. The results indicate that the density of EL2 defect of irradiated GaAs decreases and the density of EL6 defect increases at lower fluence levels. At higher fluences, an increase in density of the EL2 level was observed. However, the density of the EL6 was decreased. It is suggested that on lower fluences, 10 MeV electron irradiation causes the dissociation of the EL2 defect, and may be used to decrease the main donor level EL2 in SI-GaAs.
Emergent Nematicity and Intrinsic Versus Extrinsic Electronic Scattering Processes in the Kagome Metal CsV3Sb5

Dirk Wulferding,Seungyeol Lee,Youngsu Choi,Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Hechang Lei,Saqlain Yousuf,Jaegu Song,Hanoh Lee,Tuson Park,Kwang-Yong Choi

DOI: https://doi.org/10.1103/physrevresearch.4.023215

2022-01-01

Physical Review Research

Abstract:Fermi-surface fluctuations and lattice instabilities in the two-dimensional metallic kagome superconductor CsV_{3}Sb_{5} are elucidated via polarization-resolved Raman spectroscopy. The presence of a weak electronic continuum in high-quality samples marks the crossover into the charge-density-wave (CDW) ordered phase, while impurity-rich samples promote strong defect-induced electronic scattering processes that affect the coherence of the CDW phase. CDW-induced phonon anomalies appear below T_{CDW}, with emergent C2 symmetry for one of the CDW amplitude modes, alluding to nematicity. In conjunction with symmetry-breaking lattice distortions, a kinklike hardening of the A_{1g} phonon energy at T_{CDW} signifies a concerted interplay of electronic correlations and electron-phonon coupling in the exotic CDW order.
Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

J HE,J SAPRIEL,R AZOULAY

DOI: https://doi.org/10.1103/physrevb.40.1121

1989-01-01

Abstract:The effects of acoustical attenuation and optical absorption on light scattering by acoustic phonons propagating along the superlattice axis are theoretically analyzed and experimentally probed in GaAs/AlAs and Si/${\mathrm{Si}}_{0.5}$${\mathrm{Ge}}_{0.5}$ superlattices. It is shown that the linewidth of the acoustic modes undergoes a clear narrowing near the Brillouin-zone edge due to the decrease of the group velocity of the phonons. It is also demonstrated that the damping of the acoustic waves makes the high-frequency modes at the Brillouin-zone edge shift into the ``forbidden gaps'' which have been evidenced in the case of lossless media. We have observed such a shift in a Si/${\mathrm{Si}}_{0.5}$${\mathrm{Ge}}_{0.5}$ superlattice sample at phonon energies around 14 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ for which the acoustic attenuation can no longer be neglected. It is also shown that the effects of optical absorption on the relative intensity of the folded acoustic modes are particularly sensitive in the condition where the incident light is Bragg reflected by the interfaces. This intensity behavior has been observed in a GaAs/AlAs superlattice and agrees with the theoretical analysis.
Space- and Angle-Resolved Vibrational Spectroscopy to Probe the Local Phonon Modes at Planar Defects

Xingxu Yan,Chengyan Liu,Chaitanya Gadre,Lei Gu,Toshihiro Aoki,Tracy Lovejoy,Niklas Dellby,Ondrej Krivanek,Ruqian Wu,Xiaoqing Pan

DOI: https://doi.org/10.1017/s1431927621004487

IF: 4.0991

2021-01-01

Microscopy and Microanalysis

Abstract:Combined with aberration-corrected scanning transmission electron microscopy (STEM) imaging, the state-of-the-art monochromated electron energy-loss spectroscopy (EELS) is capable of detecting vibrational spectra for a variety of materials with an attainable energy resolution less than 10 meV and sub-nanometer resolution [1, 2]. Additionally, by varying the convergence semi-angle ( α ) and EELS collection geometry, momentum resolution is achieved, enabling angle-resolved vibrational spectroscopy that maps out the phonon dispersion relations [3]. Balancing these three aspects: spatial, energy, and momentum resolutions, we can obtain a powerful space- and angle-resolved vibrational spectroscopy to investigate local phonon modes near the crystalline defects in semiconductors and their heterostructures [4]. Planar defects such as stacking faults and interfaces are believed to impede phonon propagation and modify the vibrational structure [5]. However, the experimental evidence of phonon-defect interactions is fundamentally elusive from either thermal conductivity measurements or optical spectroscopies due to their insufficient spatial resolution. Here we show two cases to demonstrate how to utilize the high spatial, energy, and momentum resolution capabilities of monochromated EELS to reveal the local defect phonon modes at (1) a stacking fault in cubic silicon carbide and (2) an interface in a Si–Ge
Investigation of Localized State Emissions in Quaternary InGaAsSb/AlGaAsSb Multiple Quantum Wells Grown by Molecular Beam Epitaxy

Huimin Jia,Lin Shen,Xiang Li,Yubin Kang,Xuan Fang,Dan Fang,Fengyuan Lin,Jilong Tang,Dengkui Wang,Xiaohui Ma,Zhipeng Wei

DOI: https://doi.org/10.1364/ome.410229

2020-01-01

Optical Materials Express

Abstract:As an essential structure of infrared semiconductor lasers, the optical properties of InGaAsSb/AlGaAsSb multiple quantum wells need to be fully investigated. In this paper, the temperature and excitation power-dependent photoluminescence (PL) spectra of the InGaAsSb/AlGaAsSb MQWs are measured. A strong free exciton emission with a photon energy of 0.631 eV was observed at room temperature. Besides the main peak, an obvious shoulder peak, located at the low photon energy position under low temperature range (T≤90 K), was confirmed to be an emission of defect related localized carriers by power-dependent PL spectra. The power-dependent PL spectra were dominated by the localized carriers emission under low excitation power (Iex≤20 mW), while the free-exciton emission dominated the PL spectra gradually when excitation power higher than 40 mW. This phenomenon is ascribed to the dissociation of localized states. Our work is of great significance for the device applications of InGaAsSb/AlGaAsSb multiple quantum wells.
LOCAL ELECTRONIC-STRUCTURES OF THE NATIVE DEFECTS IN MODULATION-DOPED ALAS/GAAS SUPERLATTICES

EG WANG,WM JIN,LY ZHANG,HY WANG

DOI: https://doi.org/10.1088/0953-8984/2/19/008

1990-01-01

Abstract:The authors investigate the character of the native defects (antisites, interstitials, vacancies and complexes of these or with impurities) in undoped and n- or p-type modulation-doped AlAs/GaAs superlattices by means of the developed recursion method. The presented electronic structures, and local and partial density of states give a detailed identification of these defects in various types of AlAs/GaAs superlattice. They have calculated the energies of highly localised electronic states and compared the results with the existing theoretical and experimental data. The stable states of the EL2 defect (AsGa-IAs pair) are studied under the assumption that it has the same atomic configuration as that in the bulk GaAs. With respect to the energy distribution, the electronic occupancy of various defects and of their atomic orbitals are determined; these show the occupied charge states directly. On the basis of these calculations, they find that the ionicity of a normal group III or V atom in AlAs/GaAs superlattices will always be positive when it becomes an interstitial and will be changed with a different type of doping, when it becomes an antisite. By considering the Coulombic nature of a Frenkel pair, some specific complexes between the native defects themselves or with the impurity Si are suggested. Finally, they describe the self-diffusion and the impurity diffusion mechanisms which occur in AlAs/GaAs superlattices with and without doping. Results are compared and contrasted with those of the bulk GaAs materials.
The Nature of As‐related Defects in Semi‐Insulating GaAs Bulk Crystals

PG MO,J WU,XQ FAN,J ZHU,YD ZHOU,HZ TAN

DOI: https://doi.org/10.1002/crat.2170270315

1992-01-01

Crystal Research and Technology

Abstract:The behaviour of As-related defects in SI (semi-insulating) GaAs are studied from the viewpoint of the origination of As-related precipitates, generation and evolution of EL2 during postgrowth and the possible defect interactions involved EL2 variation under As overpressure annealing. The precipitates were identified as elemental As and As-rich GaAs polycrystalline grains and their features depend on the growth process. A defect interaction model has been proposed on the generation/annihilation of EL2 assigned as As(Ga) V(As) V(Ga) complex respect to non-stoichiometry such as As(i), V(Ga) and V(As).
Infrared Absorption in SiGe/Si Multiple Quantum Wells

SL GU,RH WANG,P HAN,LQ HU,R ZHANG,YD ZHENG

DOI: https://doi.org/10.1016/0749-6036(92)90311-r

IF: 3.22

1992-01-01

Superlattices and Microstructures

Abstract:Infrared absorption has been used to investigate the subband structures in SiGe/Si quantum wells. The quantum wells are prepared using RRH/VLP-CVD and consist of 20 periods of SiGe(6nm)Si(20nm) and 60 periods of SiGe(4nm)Si(40nm). The good periodical and interface sharpness of the SiGe/Si quantum wells have been shown by Auger Electron Spectroscopy (AES). The absorption peaks due to transitions between the hole subbands and the conduction band have been observed in infrared absorption spectra. The transverse photocurrent spectrum parallel to the growth plane have also shown absorption peaks due to transitions between the heavy and light hole band states and the conduction band states in quantum wells.
II-VI / III-V Strained-Layer Superlattice Materials and Devices

Fuxi Gan,Hailong Wang,Jie Cui

DOI: https://doi.org/10.1557/PROC-216-489

1990-01-01

Abstract:The optical and spectroscopy properties of Il-VI wide gap semiconductor SLSs have been studied. We report the first observation of the pulse compression in ZnS-ZnSe MQW and the folded LA phonon modes in ZnS-ZnSe SLS;The confined LOn phonon modes in ZnSe-ZnTe SLS are observed and the critical thickness of ZnSe-ZnTe SLS are determined,for the first time, by Raman scattering.
On the experimental properties of the TS defect in 4H-SiC

Johannes A. F. Lehmeyer,Alexander D. Fuchs,Zhengming Li,Titus Bornträger,Fabio Candolfi,Maximilian Schober,Marcus Fischer,Martin Hartmann,Elke Neu,Michel Bockstedte,Michael Krieger,Heiko B. Weber

2024-04-15

Abstract:When annealing a 4H silicon carbide (SiC) crystal, a sequence of optically active defect centers occurs among which the TS center is a prominent example. Here, we present low-temperature photoluminescence analyses on the single defect level. They reveal that the three occurring spectral signatures TS1, TS2 and TS3 originate from one single defect. Their polarization dependences expose three different crystallographic orientations in the basal plane, which relate to the projections of the nearest neighbor directions. Accordingly, we find a three-fold level-splitting in ensemble studies, when applying mechanical strain. This dependency is quantitatively calibrated. A complementary electrical measurement, deep level transient spectroscopy, reveals a charge transition level of the TS defect at 0.6 eV above the valence band. For a future identification, this accurate characterization of its optical and electronic properties along with their response to mechanical strain is a milestone.

Applied Physics
The evolution of the localized interface optical-phonon modes in a finite superlattice with a structural defect

Xin-Jun Wang,Lingling Wang,Wei-Qing Huang,Ke-Qiu Chen,Z Shuai,B S Zou

DOI: https://doi.org/10.1088/0268-1242/20/10/008

IF: 2.048

2005-01-01

Semiconductor Science and Technology

Abstract:Using a transfer matrix method, we study the property of the interface optical-phonon modes (IOPMs) in a finite semiconductor superlattice (SL) with a structural defect layer in the dielectric continuum approximation. The results show that in such a structure there exist two types of localized IOPMs. They may appear either in the minigap or below and above the bulk bands, and their macroscopic electrostatic potentials are located in the vicinity of the defect layer or surface layer. The evolution of the modes localized in the vicinity of a different interface can clearly be tracked. In some cases, the degeneracy between localized IOPMs may occur, but the conservation of the total number of IOPMs is always kept for every value of the transversal wave number.
A Se Vacancy Induced Localized Raman Mode in Two-Dimensional MoSe2 Grown by CVD

Shudong Zhao,Meilin Lu,ShaSha Xue,Lin Yan,Peng Miao,Yan Hang,Xianjie Wang,Zhiguo Liu,Yi Wang,Lei Tao,Yu Sui,Yang Wang

DOI: https://doi.org/10.48550/arxiv.1904.09789

2019-01-01

Abstract:Defects play a significant role in optical properties of semiconducting two-dimensional transition metal dichalcogenides (TMDCs). In ultra-thin MoSe2, a remarkable feature at 250 cm-1 in Raman spectra is ascribed to be a defect-related mode. Recent attempts failed to explain the origin of this peak, leaving it being a mystery. Here in this work, we demonstrate that this peak is a Se vacancy induced defect mode. Heat effect and hydrogen etching are two main factors to introduce Se vacancies in CVD process of growing MoSe2. A phonon confinement model can well explain the behaviors of intrinsic Raman modes. Density functional theory (DFT) calculation reveals that single Se vacancy (VSe) is responsible for the appearance of Raman peak at 250 cm-1 and this mode is an A1g-like localized mode which is also confirmed by polarized Raman scattering experiment. The relative strength of this mode can be a characterization of the quality of 2D MoSe2. This work may offer a simple method to tailor chalcogenide vacancies in 2D TMDCs and provide a way to study their vibrational properties.
Study of Optical Properties in GaAs1-xSbx/GaAssingle Quant Um Wells

Luo Xiang-dong,Bian Li-Feng,Xu Zhong-Ying,Luo Hai-lin,Yuqi Wang,Jiannong Wang,Ge Weikun

DOI: https://doi.org/10.7498/aps.52.1761

IF: 0.906

2003-01-01

Acta Physica Sinica

Abstract:GaAsSb/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy are studied by selectively-excited photoluminescence (SEPL) measurement. For the first time, we have simultaneously observed the PL from both type Ⅰ and type Ⅱ transitions in GaAsSb/GaAs heterostructure in the SEPL. The two transitions exhibit different PL behaviours under different excitation energy. As expected, the peak energy of type I emission remains constant in the whole excitation energy range we used, while type Ⅱ transition shows a significant blue shift with increasing excitation energy.The observed blue shift is well explained in terms of electron-hole charge separation model at the interface. Time-resolved(TR) PL exhibits more type Ⅱ characteristic of GaAsSb/GaAs QW. Moreover, the results of the excitation-power-dependent PL and TRPL provide more direct information on the type-Ⅱ nature of the band alignment in GaAsSb/GaAs quantum-well structures. By combining the experimental results with some simple calculations, we have obtained the strained and unstrained valence band offsets of Qv＝1.145 and Q0v＝0.76 in our samples, respectively.

Study of Local Vibrational Mode Absorptions of a Defect Related to EL2 in SI-GaAs

Pair of Local Vibration Mode Absorption-Bands Related to El2 Defects in Semiinsulating Gaas

Model Study of the Local Vibration Center Related to El2 Levels in Gaas

Relation Between the Metastability of EL2 and the Photosensitivity of Local Vibrational Modes in Semi-Insulating GaAs.

Verification Ofel2 Electronic Absorption Effect on Charge Transfer in Semi-Insulating GaAs

Light Scattering by Superlattice Acoustic Modes at Critical Points of the Brillouin Zone

Coupled Brillouin-Raman Study of Direct and Folded Acoustic Modes in Gaas-Alas Superlattices

EL2 Deep Level Defects and Above-Band Gap Two-Photon Absorption in High Gain Lateral Semi-Insulating GaAs Photoconductive Switch

Investigation of EL2 defect in 10MeV electron irradiated undoped semi-insulating LEC GaAs

Emergent Nematicity and Intrinsic Versus Extrinsic Electronic Scattering Processes in the Kagome Metal CsV3Sb5

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Space- and Angle-Resolved Vibrational Spectroscopy to Probe the Local Phonon Modes at Planar Defects

Investigation of Localized State Emissions in Quaternary InGaAsSb/AlGaAsSb Multiple Quantum Wells Grown by Molecular Beam Epitaxy

LOCAL ELECTRONIC-STRUCTURES OF THE NATIVE DEFECTS IN MODULATION-DOPED ALAS/GAAS SUPERLATTICES

The Nature of As‐related Defects in Semi‐Insulating GaAs Bulk Crystals

Infrared Absorption in SiGe/Si Multiple Quantum Wells

II-VI / III-V Strained-Layer Superlattice Materials and Devices

On the experimental properties of the TS defect in 4H-SiC

The evolution of the localized interface optical-phonon modes in a finite superlattice with a structural defect

A Se Vacancy Induced Localized Raman Mode in Two-Dimensional MoSe2 Grown by CVD

Study of Optical Properties in GaAs1-xSbx/GaAssingle Quant Um Wells