Abstract:Recently, Ga-2-O-3-based, solar-blind photodetectors (PDs) have been extensively studied for various commercial and military applications. However, to date, studies have focused only on the crystalline phases, especially beta-Ga2O3, and the crystalline quality must be carefully controlled because of its strong impact on device characteristics. Based on previous reports, amorphous -semiconductor based PDs can also be expected to exhibit excellent photodetection characteristics. In this work, amorphous gallium oxide thin films were deposited by radio frequency (RF) magnetron sputtering, and the metal semiconductor metal (MSM) PD was fabricated and compared with a beta-Ga2O3 film prepared side-by-side as the control sample. The as-sputtered film possessed a high density of defects, including structural disorders, oxygen vacancies, and likely, dangling bonds, resulting in record-high responsivity (70.26 A/W) for a thin-film-type gallium oxide PD due to a high internal gain and the contribution of extrinsic transitions despite a relatively large dark current. The high sensitivity was further confirmed by a high 250 nm/350 nm rejection ratio exceeding 105, the specific detectivity as large as 1.26 x 10(14) Jones, and a cutoff wavelength of 265.5 nm. A rapid recovery (0.10 s) rather than a strong, persistent photoconductivity was observed and attributed to effective surface recombination. Our findings contribute to a more comprehensive understanding of highly nonstoichiometric amorphous gallium oxide thin films and reveal additional pathways for the development of high-performance, solar-blind PDs that are inexpensive, large-area, and suitable for mass production.

Mechanism for Long Photocurrent Time Constants in α-Ga2O3 UV Photodetectors

Huge photosensitivity gain combined with long photocurrent decay times in various polymorphs of Ga 2 O 3 : effects of carriers trapping with deep centers

Photocarrier Transport Reconstruction and Dramatical Performance Enhancement in Ultrawide-Bandgap Ε-Ga2o3 Photodetectors Via Surface Defect Passivation

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Ultrahigh-Performance Solar-Blind Photodetector Based on $\alpha$ -Phase- Dominated Ga 2 O 3 Film with Record Low Dark Current of 81 Fa

Photocarrier transport reconstruction and dramatical performance enhancement in ultrawide-bandgap ε-Ga 2 O 3 photodetectors via surface defect passivation

High-performance -Ga<sub>2</sub>O<sub>3</sub> thickness dependent solar blind photodetector

High-Speed and Ultrasensitive Solar-Blind Ultraviolet Photodetectors Based on In Situ Grown β-Ga2O3 Single-Crystal Films

High-Performance ε-Ga<sub>2</sub>O<sub>3</sub> Solar-Blind Ultraviolet Photodetectors With Interdigital Framework

High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga 2 O 3

Ultrahigh Responsivity Deep-Ultraviolet Ε-Ga2o3 Field Effect Phototransistors with P-Si Gate

Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3

Transition of photoconductive and photovoltaic operation modes in amorphous Ga2O3-based solar-blind detectors tuned by oxygen vacancies

Tuning the Bandgaps of (AlxGa1−x)2O3 Alloyed Thin Films for High‐Performance Solar‐Blind Ultraviolet Fully Covered Photodetectors

Ultralow-Noise Nano-Ag/Amorphous Ga 2 O 3 UV Photodetector Realized by Introducing Local Schottky Junctions

High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer

Analysis of Dark Currents and Deep Level Traps in InP- and GaAs-based in 0.83 Ga 0.17 As Photodetectors

An Ultrahigh Responsivity Self-Powered Solar-Blind Photodetector Based on a Centimeter-Sized Β-Ga2o3/polyaniline Heterojunction.

High-performance solar-blind photodetector based on Si-doped α-Ga2O3 thin films grown by mist chemical vapor deposition

Ultrahigh-Responsivity, Rapid-Recovery, Solar-Blind Photodetector Based on Highly Nonstoichiometric Amorphous Gallium Oxide

Photocurrent Characteristics of Two-Dimensional-Electron-Gas-Based Algan/Gan Metal-Semiconductor-Metal Photodetectors