Passivation with sputtered silicon nitride and modified heat treatment for lifetime improvement
Masauko Henry Utila,Hao-Wei Lin,Hao-En Chan,Jacob Wilder Ng,Chun-Chieh Lin,Pooja Manik Badgujar,Chia-Liang Cheng,Wang-Chi V. Yeh,Chu-Hsuan Lin
DOI: https://doi.org/10.1016/j.mssp.2024.109007
IF: 4.1
2024-10-17
Materials Science in Semiconductor Processing
Abstract:It is widely inferred that Light and Elevated Temperature Induced Degradation (LeTID) is attributed to the diffusion of hydrogen into bulk silicon from the rear PECVD SiN x :H layer of PERC during the high-temperature firing process. We propose not only a simplified heat treatment flow for the typical PERC structure but also a new degradation-reduced structure with sputtered SiN x . The common N 2 annealing after Al 2 O 3 formation can be skipped to reduce process complexity and cost because we found that the lifetime can be even improved by omitting the moderate-temperature annealing while retaining the unavoidable high-temperature firing process for metallization. In the light soaking measurement of lifetime, the sputtered-SiN x passivated wafer displayed a higher lifetime than the PECVD-SiN x :H passivated wafer. The absence of excess hydrogen in the sputtered-SiN x film contributes to the suppression of LeTID. We further demonstrate that the sputtered-SiN x cells own higher V OC compared to PECVD-SiN x :H cells under light soaking.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied