Fluorinated $\hbox{srtio}_{3}$ As Charge-Trapping Layer for Nonvolatile Memory Applications

X. D. Huang,Johnny K. O. Sin,P. T. Lai
DOI: https://doi.org/10.1109/ted.2011.2169675
2011-01-01
Abstract:Charge-trapping properties of SrTiO3 with and without fluorine incorporation are investigated by using an Al/Al2O3/SrTiO3/SiO2/Si structure. The memory device with a fluorinated SrTiO3 film shows promising performance in terms of large memory window (8.8 V) by +/-8-V sweeping voltage, large flatband-voltage (V-FB) shift (2.5 V) at a low gate voltage of +6 V for 1 ms, negligible V-FB shift after 10(5)-cycle program/erase stressing, and improved data retention compared with that without fluorine treatment. These advantages can be associated with generated deep-level traps, reduced leakage path, and enhanced strength of the film due to the fluorine incorporation.
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