Structural and Dielectric Properties of Calcium Doped Bismuth Zinc Niobate Thin Films Prepared by Pulsed Laser Deposition at Room Temperature

Zhao Wang,Wei Ren,Muhammad Saeed Khan,Peng Shi,Xiaoqing Wu
DOI: https://doi.org/10.1016/j.ceramint.2015.03.251
IF: 5.532
2015-01-01
Ceramics International
Abstract:(Bi1.5Zn0.1Ca0.4)(Zn0.5Nb1.5)O7 (BZNCa) thin films were prepared by pulsed laser deposition on Pt/TiO2/SiO2/Si substrates at room temperature. The as-deposited films and films post-annealed from 100°C to 175°C for 10min in air are all amorphous. The influence of the post-annealing process on structural and electrical properties was investigated. The surface morphology of BZNCa films remains almost same with the annealing temperature. While the dielectric and leakage-current properties of the films are strongly influenced by the annealing temperature. The film deposited at O2 pressure of 4Pa and then post-annealed at 150°C shows the improved dielectric and leakage-current characteristics. The dielectric constant and loss tangent are 67.2 and 0.03at 100kHz, respectively. The leakage current density is less than 1µA/cm2 at an applied bias electric field of 400kV/cm. The results indicate that calcium doped BZN thin films have potential applications for embedded capacitors.
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