Study on ferroelectric and dielectric properties of niobium doped Bi4Ti3O12 ceramics and thin films prepared by PLD method

Z.H Bao,Y.Y Yao,J.S Zhu,Y.N Wang
DOI: https://doi.org/10.1016/S0167-577X(02)00628-6
IF: 3
2002-01-01
Materials Letters
Abstract:Nb doped bismuth titanate Bi4−x(Ti1−xNbx)3O12 (x=0%, 0.2%, 0.4%, 1%, 1.5%) ceramic samples were sintered and random oriented Bi4−x(Ti1−xNbx)3O12 (x=1%) thin films were fabricated on (111)Pt/TiO2/SiO2/Si with Pulsed Laser Deposition (PLD) method. The dielectric and ferroelectric properties of Nb doped Bi4Ti3O12 (BTO) were investigated. A small amount of niobium doping results in a marked improvement in 2Pr. The 2Pr, 2Ec, dielectric constant and loss factor of Bi4−x(Ti1−xNbx)3O12 (x=1%) thin film are about 30 μC/cm2, 130 kV/cm, 175 and 0.02, respectively. However, after 3×109 switching cycles, 45% degradation of 2Pr was observed in the film.
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