InSb/Ti2O3 pn heterojunctions: optoelectronic properties and NIR photovoltaic response
Wenwei Wang,Yixuan Hou,Yingbang Yao
DOI: https://doi.org/10.1007/s10854-024-12514-7
2024-04-10
Journal of Materials Science Materials in Electronics
Abstract:This work constructed transverse and longitudinal pn heterojunctions of InSb and Ti 2 O 3 thin films and assessed the optoelectronic properties of the two different heterojunctions. This study used magnetron sputtering to create InSb films on silicon substrates. Their morphology and structure were examined using SEM, XRD, and atomic force microscopy (AFM), and the transverse and longitudinal pn heterojunctions were tested for their I–V characteristic curves and photovoltaic properties using near-infrared (NIR) light with a power of 3 W and a wavelength of 950 nm. It is clear from the XRD test findings and other data that the crystallinity of the films is higher at 400 °C for the substrate. The transverse pn heterojunction device has an excellent photovoltaic performance with a photocurrent of about 54.65 A, a photoresponse rate of about 18.22 μA/W, and a conduction/cut-off ratio of about 2.73, according to the results of the I–V characterization curve test and the photovoltaic performance test, while the longitudinal pn heterojunction device also has an excellent photovoltaic performance with a photocurrent of about. We created two different types of devices based on the successfully prepared InSb thin films. The vertical pn heterojunction device responds more quickly, in the range of 0. It is also discovered that the horizontal and vertical pn heterojunctions' decay times are shorter than their rise times.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied