Magneto‐Optical Properties of InSb Semiconductor Heterostructures

xiaochuan pan,d saha,g d sanders,christopher j stanton,taroshani d kasturiarachchi,m edirisooriya,t d mishima,r e doezema,m b santos
DOI: https://doi.org/10.1063/1.3671711
2011-01-01
AIP Conference Proceedings
Abstract:We have theoretically and experimentally studied the spin-dependent Landau levels for electrons and holes in narrow-gap InSb/AlInSb quantum well systems. We use the envelope function approximation for the electronic and magneto-optical properties of InSb/AlInSb. Our model includes the conduction electrons, heavy holes, light holes and spin-orbit split-off holes for a total of 8 bands taking spin into account. The Pidgeon-Brown model is generalized to include the effects of confinement in the quantum wells. In addition, strain effects are taken into account by assuming pseudomorphic growth conditions. Comparing our calculated electronic structures with experimental magneto-absorption measurements, we obtain excellent agreement. Our results demonstrate that in addition to the major transitions, strong band mixing in the narrow gap material leads to several optical transitions which normally are forbidden.
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